Semiconductor device and manufacturing method thereof

Abstract

Disclosed a semiconductor device and a method of manufacturing thereof. The semiconductor apparatus comprises: a first conductive semiconductor layer, comprising a first conductive semiconductor layer and an upper conductive semiconductor layer; V-pit, passing through at least part of the first upper conductive semiconductor layer; The second conductive semiconductor layer, located on the first conductive semiconductor layer and filled with V-pits; And the active layer, inserted between the first conductive semiconductor layer and the second conductive semiconductor layer, V- pit through the active layer, wherein the first upper conductive semiconductor layer having a higher defect density than the first conductive semiconductor layer, and the first upper conductive semiconductor layer comprises a V- pit generating layer comprising the starting point of the V- pit. Semiconductor devices include V-pits with large size and high density, thereby effectively preventing damage to semiconductor devices due to electrostatic discharge.

Description

[0001] This application claims Korean Patent Application No. 10-2013-0128589 filed on October 28, 2013, Korean Patent Application No. 10-2014-0045933 filed on April 17, 2014, filed on August 14, 2014 Korean Patent Application No. 10-2014-0106024 filed, Korean Patent Application No. 10-2014-0106025 filed on August 14, 2014, and Korean Patent Application No. 10-2014-0106026 filed on August 14, 2014 Priority and benefit of patent applications, as fully set forth herein, are hereby incorporated by reference for all purposes. technical field [0002] The present invention relates to a semiconductor device and a method of manufacturing the semiconductor device, and more particularly, to a semiconductor device capable of improving electrostatic discharge characteristics and a method of manufacturing the semiconductor device. Background technique [0003] Nitride semiconductors are used as light sources for display devices, signal lamps, lighting devices, and optical communication d...

AI Technical Summary

Problems solved by technology

However, current leakage may increase depending on doping conditions due to insufficient growth process of the p-type semiconductor layer for filling the V-pit

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