Semiconductor device and method of manufacturing the same

Abstract

Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pit; and an active layer interposed between the first and second conductive type semiconductor layers with the V-pit passing through the active layer. The first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and includes a V-pit generation layer comprising a starting point of the V-pit. The semiconductor device includes the V-pits having a large size and a high density to efficiently preventing damage to the semiconductor device due to electrostatic discharge.

Description

[0001] This application claims Korean Patent Application No. 10-2013-0128589 filed on October 28, 2013, Korean Patent Application No. 10-2014-0045933 filed on April 17, 2014, filed on August 14, 2014 Korean Patent Application No. 10-2014-0106024 filed, Korean Patent Application No. 10-2014-0106025 filed on August 14, 2014, and Korean Patent Application No. 10-2014-0106026 filed on August 14, 2014 Priority and benefit of patent applications, as fully set forth herein, are hereby incorporated by reference for all purposes. technical field [0002] The present invention relates to a semiconductor device and a method of manufacturing the semiconductor device, and more particularly, to a semiconductor device capable of improving electrostatic discharge characteristics and a method of manufacturing the semiconductor device. Background technique [0003] Nitride semiconductors are used as light sources for display devices, signal lamps, lighting devices, and optical communication d...

AI Technical Summary

Problems solved by technology

However, current leakage may increase depending on doping conditions due to insufficient growth process of the p-type semiconductor layer for filling the V-pit

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