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Method for reducing diameter of self-crimping micron tube by virtue of metal nanoparticles

A metal nanoparticle, self-curling technology, applied in metal material coating technology, microstructure technology, microstructure device and other directions, can solve problems such as unsatisfactory effects, achieve excellent mechanical properties and structural properties, and improve SERS) strength , the effect of reducing the diameter

Active Publication Date: 2015-04-29
BEIJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In summary, the traditional method of reducing the diameter of self-curling microtubes or even preparing self-curling nanotubes by changing the internal stress of the strained film is not ideal.

Method used

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  • Method for reducing diameter of self-crimping micron tube by virtue of metal nanoparticles
  • Method for reducing diameter of self-crimping micron tube by virtue of metal nanoparticles
  • Method for reducing diameter of self-crimping micron tube by virtue of metal nanoparticles

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Embodiment 1

[0050]Embodiment 1 of the present invention provides a method for reducing the diameter of self-curling microtubes by means of metal nanoparticles. The process flow is shown in Figure 1, which specifically includes the following steps:

[0051] S1: Deposit a GaAs buffer layer on a GaAs(100) single crystal substrate:

[0052] In arsine (AsH 3 ) to 720°C under protection, using the MOCVD method, using trimethylgallium (TMGa) and AsH 3 GaAs buffer layer is grown. The thickness of the GaAs buffer layer is 400nm, and the V / III ratio is controlled at 60.

[0053] S2: Growing a sacrificial layer on the GaAs buffer layer:

[0054] At 720°C, with trimethylaluminum (TMAl) and AsH 3 An AlAs sacrificial layer is grown. The thickness of the AlAs sacrificial layer is 50nm, and the V / III ratio is controlled at 40.

[0055] S3: Growth of the strained film on the sacrificial layer:

[0056] At 720°C, using trimethylindium (TMIn), TMGa and AsH 3 GrowthIn x Ga 1-x As / GaAs strained bila...

Embodiment 2

[0081] The preparation method is the same as in Example 1, and the difference is HF in the S8 step: H 2 The etching time of O=1:40 (volume ratio) solution to laterally etch the AlAs sacrificial layer (without stirring at room temperature) was increased to 120s.

[0082] When rolled into a multi-coil tube, nano-gold particles are embedded in the tube wall, forming a semiconductor / metal nanoparticle heterostructure (such as image 3 (c) as shown in the SEM image).

Embodiment 3

[0084] S3: Growth of the strained film on the sacrificial layer:

[0085] The composition x of In is controlled at 0.2, the thickness of InGaAs / GaAs is 15nm / 35nm respectively, and the ratio of V / III is controlled at 60. Figure 1(b) The epitaxial wafer structure used to prepare self-curling microtubes on a GaAs(100) substrate, on which a 2nm thick Au film is deposited on the surface, and the bottom layer is a GaAs(100) substrate.

[0086] S7: using rapid thermal annealing (RTA) to make the metal film form metal nanoparticles;

[0087] In nitrogen (N 2 ) atmosphere for In with a thickness of 15nm / 35nm 0.2 Ga 0.8 The As / GaAs strained film was subjected to RTA, and the annealing temperature was maintained at 650°C for 300s; Figure 4(a) and Figure 4(b): The 2nm thick gold film on the surface of the InGaAs / GaAs strained film was subjected to rapid thermal annealing to form gold nanoparticles.

[0088] 15nm / 35nm In 0.2 Ga 0.8 The SEM of the As / GaAs strained bilayer film after s...

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Abstract

The invention provides a method for reducing the diameter of a self-crimping micron tube by virtue of metal nanoparticles. The method comprises the following steps: depositing a buffer layer on a substrate or a virtual substrate; depositing a sacrificial layer on the buffer layer; depositing a strain thin film on the sacrificial layer; carrying out primary photoetching and corrosion, wherein the strain thin film forms a table-board, so that the sacrificial layer is exposed; carrying out secondary photoetching and forming a pattern window by using photoresist; depositing a metal thin film, and annealing at a high temperature, wherein the metal thin film forms the metal nanoparticles; and laterally corroding the sacrificial layer, wherein the strain thin film covering the metal nanoparticles on the surface is self-crimped to form the tube. On the premise of not changing the thickness of the thin film and strain, the diameter of the self-crimping micron tube can be remarkably reduced just by virtue of the metal nanoparticles and the self-crimping micron tube with the diameter which is near to 1 micron can be easily prepared, and even the nanotube with the diameter which is lower to several hundred nanometers and a regular array can be easily prepared. Meanwhile, the method can ensure that the micron tube or the nanotube has excellent mechanical and structural characteristics.

Description

technical field [0001] The invention relates to a micron-tube material and a preparation method thereof, belonging to the field of micro-nano materials and micro-nano devices. Background technique [0002] As a special three-dimensional (3D) micro-nano functional structure, self-curling microtubes and nanotubes prepared by micro-nano self-curling technology have structural characteristics such as hollow channels, separation from the substrate, and controllable size and shape. It is very easy to combine with functional materials (such as quantum wells / quantum dots, metal nanoparticles, luminescent dyes), so it has great potential in the fields of micro-nano electromechanical systems (MEMS / NEMS), optical resonant cavities, biomedical sensing, and microfluidics. The broad application prospects naturally arouse the widespread attention and great research interest of scholars from all over the world. [0003] The earliest work on the preparation of nanotubes and microtubes using...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 王琦高云霞潘志洪任晓敏
Owner BEIJING UNIV OF POSTS & TELECOMM
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