Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Vacuum cavity electrostatic chuck adjusting device

An electrostatic chuck and adjustment device technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as inability to adjust dynamically, and achieve the effect of stable operation and simple structure

Inactive Publication Date: 2015-04-22
CHINA UNIV OF GEOSCIENCES (BEIJING)
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the electrostatic chuck bases are installed in a static and fixed way to meet the requirements, and cannot be dynamically adjusted.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vacuum cavity electrostatic chuck adjusting device
  • Vacuum cavity electrostatic chuck adjusting device
  • Vacuum cavity electrostatic chuck adjusting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Various embodiments of the invention will be described in more detail below with reference to the accompanying drawings. In the various drawings, the same elements are denoted by the same or similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale.

[0028] Such as figure 1 As shown, the vacuum chamber of the present invention includes an upper cover 1, a lower cover 2 and a cavity wall 3. In the vacuum chamber formed by the upper cover 1, the lower cover 2 and the cavity wall 3, an upper electrode 100, an electrostatic Chuck 4, electrostatic chuck support structure 5, base 6, height adjustment structure 7 and gas path 8. Wherein, the upper electrode 100 passes through the upper cover 1, is located at the upper end of the vacuum chamber, and is opposite to the electrostatic chuck 4; the wafer 9 is placed on the electrostatic chuck 4, and the electrostatic chuck support structure 5 is arranged on the static The lo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a vacuum cavity electrostatic chuck adjusting device which comprises an electrostatic chuck supporting structure, a base and a height adjusting structure. The electrostatic chuck supporting structure is arranged on the lower side of an electrostatic chuck and used for supporting the electrostatic chuck. The base is fixed to a lower cover of a vacuum cavity. The height adjusting structure is connected with the base and the electrostatic chuck supporting structure and is used for adjusting the height of the electrostatic chuck, and the levelness of the electrostatic chuck can be guaranteed while the height is adjusted. By means of the electrostatic chuck adjusting device, vertical motion of the electrostatic chuck can be achieved, the horizontal balance of the electrostatic chuck in the motion process can be guaranteed, and meanwhile electrostatic chuck and chip temperature adjustment can be achieved.

Description

technical field [0001] The invention relates to an electrostatic chuck adjustment device in a vacuum chamber. Background technique [0002] At present, the electronic information industry with integrated circuits as the core has become the largest industry, and it plays a huge role in transforming and driving the transformation of traditional industries into the digital age, especially when our country is in a critical period of transformation and development. In the integrated circuit manufacturing technology industry, there is a category based on wafer processing, including: etching, plasma enhanced / chemical vapor deposition (PE / CVD), physical vapor deposition (PVD) and oxidation diffusion processes. In wafer processing, the fixation of the wafer is very important. At present, the most widely used method is to use the electrostatic electrodes inside the electrostatic chuck to induce the same amount of opposite charges on the dielectric layer and the wafer, and use the prin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L21/67
CPCH01L21/683
Inventor 杨义勇刘伟峰季林红程嘉
Owner CHINA UNIV OF GEOSCIENCES (BEIJING)
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com