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Method for manufacturing quartz crystal wafer for high-precision piezoelectric transducer

A technology of piezoelectric sensors and quartz wafers, applied in chemical instruments and methods, stone processing equipment, crystal growth, etc., can solve problems such as poor processing technology of quartz wafers, and achieve high precision, high stability, and stress-relieving effects

Inactive Publication Date: 2015-04-22
SICHUAN SANTAI CRYSTAL ELECTRONICS
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  • Summary
  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to: aim at the problems existing in the prior art, provide a kind of preparation method of quartz wafer for high-precision piezoelectric sensor, solve the problem that the existing crystal wafer processing technology is very poor

Method used

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Embodiment

[0034] The invention provides a method for preparing a high-precision, high-stability piezoelectric sensor quartz wafer, the method comprising steps as follows:

[0035] Step 1: First, select the raw material (artificial crystal), select the raw material with less than 50 corrosion tunnels and meet the design size of the chip.

[0036] Step 2: Material orientation cutting.

[0037] Orient the selected raw materials on the X-ray orientation instrument according to the required crystal orientation (XY cut, YX cut), the orientation accuracy will eventually affect the measurement accuracy of its sensor, so the orientation accuracy is required to be within ±3'. In order to control the orientation accuracy within ±3′, first determine its coordinate axis according to the crystallographic form of the material, select two surfaces as reference planes (one cutting surface and one glue surface), and require the cutting surface to be perpendicular to the glue surface. Measure the angle o...

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PUM

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Abstract

The invention provides a method for manufacturing a quartz crystal wafer for a high-precision piezoelectric transducer. The method comprises the following steps: (1) material selection, wherein raw materials with the number of etch channels smaller than 50 are selected; (2), material orientation cutting, wherein the selected raw materials are oriented on an X-ray orientation device in the needed crystal orientation, and then a multiline cutting manner is used for cutting the quartz crystal into the wafer with the needed thickness; (3), material forming, wherein the wafer is machined into a needed shape; (4), surface treatment, wherein the formed wafer is ground by a green silicon carbide grinding material with the gradually-decreased granularity, and then polished; and (5), stress relieving. Through the five steps of material selection-material orientation cutting-material forming-surface treatment-stress relieving, the manufactured quartz crystal wafer is high in precision and stability and completely can meet needs of the piezoelectric transducer, and the processing steps can reach the higher processing precision.

Description

technical field [0001] The invention relates to the field of preparation methods of quartz wafers, in particular to a preparation method of quartz wafers for high-precision piezoelectric sensors. Background technique [0002] Piezoelectric sensors are most commonly used as force sensors, among which piezoelectric sensors are particularly important. With the development of sensors and Internet of Things technology, the requirements for sensors are getting higher and higher, and quartz crystals are used more and more as sensitive materials for corresponding sensors. Quartz crystals have good time and temperature stability, mechanical strength and quality. High factor, high rigidity, high natural frequency, good dynamic performance and other advantages, the sensor made with it has stable performance, high precision, long life, high sensitivity, good linearity, no hysteresis, high mechanical strength, solid structure, temperature range Wide, little affected by temperature, wide...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/00B24B37/04
CPCB24B1/00B28D5/04C30B33/02
Inventor 王天雄陈金灵王显文
Owner SICHUAN SANTAI CRYSTAL ELECTRONICS
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