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Preparation method of fluorine-doped tin dioxide transparent conductive film

A technology of transparent conductive film and tin dioxide, which is applied in the direction of liquid chemical plating, metal material coating process, coating, etc., can solve the problems of adverse effects on film performance, achieve good transmittance, improve performance, and research well foreground effect

Active Publication Date: 2016-09-07
LIAONING UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, during the preparation of the sol-gel, the Cl - 、Na + , Ca + Impurities such as ions are brought into the FTO film, which will have an adverse effect on the performance of the film

Method used

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  • Preparation method of fluorine-doped tin dioxide transparent conductive film
  • Preparation method of fluorine-doped tin dioxide transparent conductive film
  • Preparation method of fluorine-doped tin dioxide transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Example 1 Preparation method of fluorine-doped tin dioxide transparent conductive film

[0034] (1) Preparation method

[0035] 1) According to the solution concentration of 0.4mol / L, take 4.513g of stannous chloride dihydrate, dissolve it in 100ml of absolute ethanol, continue to stir vigorously at 70°C, add a small amount of deionized water dropwise after clarification, and stir into a sticky paste , cooled to room temperature, then put in 100ml of absolute ethanol, stirred at 50°C for 30min to form a sol, added dropwise a small amount of acetic acid to adjust the pH value to 2-3, and obtained A solution. Weigh 0.317g of ammonium fluoride, dissolve it in a small amount of deionized water, then add it to solution A, stir at 70°C for about 2 hours, leave 50ml of the solution, and let it stand for 24 hours to form a uniform and stable transparent tin fluoride sol.

[0036] 2) Take 15ml of tetraethyl orthosilicate and slowly drop it into 30ml of absolute ethanol, stir fo...

Embodiment 2

[0048] Example 2 Effect of annealing process on fluorine-doped tin dioxide transparent conductive film

[0049] (1) Preparation method

[0050] Method is with embodiment 1, difference is in 4) step.

[0051] 4) Spin coating with a homogenizer, the speed of the homogenizer is 3000r / min, the time is 30s, first spin coat a layer of SiO 2 Sol, and then spin-coat tin fluorosol, put the coated glass sheet into an oven at 100°C to dry, then transfer to a high-temperature muffle furnace to dry at 500°C for 15 minutes, cool naturally to room temperature, and repeat the above operations to achieve the desired film thickness. Finally, annealing is carried out under nitrogen, vacuum or air respectively to obtain the target product fluorine-doped tin dioxide transparent conductive film respectively.

[0052] (2) Detection

[0053] 1. Conductivity

[0054] The resistivity test was carried out on the films annealed in nitrogen, vacuum and air respectively by Hall effect instrument, the ...

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Abstract

The invention relates to a preparation method for an FTO (Fluorine-doped Tin Oxide) transparent conductive thin film, and aims to improve the electrical conductivity of the FTO transparent conductive thin film. According to the method, sol is prepared from starting raw materials SnCl2.2H2O and NH4F, and Cl<-> is removed by the process of stirring and evaporating the sol into xerogel and dissolving the xerogel into sol; meanwhile, a glass substrate is spin-coated with a layer of SiO2 to prevent impurity ions such as Na<+> and Ca<+> in glass from entering the FTO transparent conductive thin film; an integrated method such as annealing in nitrogen is combined, so that the electrical conductivity of the thin film is further improved.

Description

technical field [0001] The invention belongs to the field of material chemistry, and in particular relates to an improved preparation method of fluorine-doped tin dioxide transparent conductive film (FTO). Background technique [0002] At present, there are many methods for preparing FTO transparent conductive films. The sol-gel method has the advantages of simple process, low price, low reaction temperature, and easy to achieve uniform doping of multiple components, so it has received extensive attention in recent years. However, during the preparation of the sol-gel, the Cl - 、Na + , Ca + Such impurity ions are brought into the FTO film, which will have an adverse effect on the performance of the film. Contents of the invention [0003] The purpose of the present invention is to provide a method for preparing a fluorine-doped tin dioxide transparent conductive film that prevents the introduction of anion and cation impurity ions in the process of preparing FTO film fr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/12
Inventor 徐洪芳王绩伟李佳范晓星谭天亚卢雪梅康大为
Owner LIAONING UNIVERSITY
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