Preparation method of silane

Abstract

The invention provides a preparation method of silane. The method comprises steps of albite decomposition reaction, silicon fluoride purification and silane preparation, wherein the albite decomposition reaction comprises steps as follows: mixing albite, fluorite and sulfuric acid with concentration of 98% at a mass ratio of 1: (1.55-2.57): (3.28-4.62) and performing reaction at the temperature of 100-200 DEG C under the self-generated pressure to obtain solid residues and silicon fluoride contained gas; the silicon fluoride purification comprises steps as follows: performing dust removal on the silicon fluoride contained gas, liquefying the silicon fluoride contained gas after dust removal to obtain a silicon fluoride liquid, removing hydrogen fluoride in the silicon fluoride liquid to obtain a silicon fluoride liquid free of hydrogen fluoride, and gasifying the silicon fluoride liquid free of hydrogen fluoride to obtain pure silicon fluoride gas; and silane preparation comprises step as follows: introducing the pure silicon fluoride gas into a sodium aluminum hydride solution for reaction to obtain a silane product. According to the preparation method, gas products including silicon fluoride and sodium aluminum hydride which are generated after albite decomposition are mainly utilized and react to prepare silane, and one novel silane preparation method capable of realizing continuous production is provided.

Description

technical field [0001] The invention relates to a method for preparing silane, in particular to a method for preparing silane by using albite. Background technique [0002] At present, microelectronics technology is the main cornerstone of modern information technology and military technology, and one of the key factors to promote scientific and technological progress, industrial development, economic take-off and social advancement. Integrated circuit is the core of microelectronics technology, and its development level and industrial scale have become an important symbol to measure a country's economic strength. Electronic specialty gases (such as silane), especially high-purity electronic gases as a new category of electronic chemical materials, are important factors restricting the reliability and yield of integrated circuits. With the rapid development of electronic information technology, the integration level is getting higher and higher, and the purity requirements ...

AI Technical Summary

Problems solved by technology

However, there are only a few countries capable of producing high-purity electronic gases above 6N, and high-purity gases are widely used in electronic products, aerospace, high-efficiency solar cells, and military industries. The preparation technology of silane is not yet perfect, and the production method is complicated. , is difficult to grasp, the products produced can not fully meet the needs of related electronic products, the quality is poor, there are many problems, and it can only be used to manufacture low-standard products, so it has brought more trouble to users. This situation is serious restricted the development of electronic technology

The original technology is produced by the trichlorosilane method, because there is chlorine in the reaction process, so the anti-corrosion and material requirements of the equipment are very high, the equipment investment is large, and the corrosion is fast. The chlorine compounds contained in the product are not easy to reduce, which directly affects the final product. the purity of