Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Friction power generator employing semiconductor composite material

A technology of triboelectric generators and composite materials, applied in the directions of triboelectric generators, layered products, etc.

Active Publication Date: 2015-03-18
NEWNAGY TANGSHAN
View PDF7 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the defects of the output performance of the existing friction generators, and provide a metal-doped polymer-semiconductor composite material friction generator, which can significantly improve the load capacity of the friction generator

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Friction power generator employing semiconductor composite material
  • Friction power generator employing semiconductor composite material
  • Friction power generator employing semiconductor composite material

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0059] The preparation method of the above-mentioned semiconductor composite material will be described in detail below. The method includes: an optional step (1) modifying the metal particles, specifically using a modifier to treat the surface of the metal particles to obtain metal particles surface-modified by the modifier. The surface treatment method used in the present invention is a conventional metal particle surface treatment method.

[0060] (2) Prepare a liquid solution of the polymer base material. Specifically, polyvinylidene fluoride, polymethyl methacrylate or polyvinyl chloride are dissolved in dimethylacetamide (DMA) to form a liquid solution. Dimethicone itself is liquid and can be applied directly to the second step.

[0061] (3) Add metal particles to the liquid solution obtained in step (2) and mix well. When polydimethylsiloxane is used as the polymer, polydimethylsiloxane and curing agent (vulcanizing agent, usually at a ratio of 10:1) are required. Th...

Embodiment 1

[0094] The size of the triboelectric generator is 3cm×3cm, and the total thickness is about 500μm. The triboelectric generator 1 includes a first electrode layer 11 , a first polymer material layer 12 , and a second electrode layer 13 which are stacked. The first polymer material layer 12 is a metal-doped polymer semiconductor composite material. The preparation method of the friction generator will be described in detail below.

[0095] 1. Preparation of semiconductor composite materials

[0096] 7.5 g of sodium lauryl sulfate was used to surface treat 25 g of silver particles (average volume particle diameter: 50 μm) to obtain metal particles surface-modified by modifiers. Add 5g of metal particles modified by the modifier surface and curing agent (Dow Corning 184) into 95g of polydimethylsiloxane (Dow Corning) to obtain a mixed slurry, in which polydimethylsiloxane and curing The mass ratio of agent is 10:1. The slurry is uniformly coated on the surface of the silicon t...

Embodiment 2

[0102] The size of the triboelectric generator is 3cm×3cm, and the total thickness is about 500μm. The triboelectric generator 1 includes a first electrode layer 11 , a first polymer material layer 12 , and a second electrode layer 13 which are stacked. The first polymer material layer 12 is a metal-doped polymer semiconductor composite material. The preparation method of the friction generator will be described in detail below.

[0103] 1. Preparation of semiconductor composite materials

[0104] 25 g of aluminum particles (average volume particle diameter: 50 μm) were surface-treated with 7.5 g of sodium lauryl sulfate to obtain metal particles surface-modified by modifiers. 5 g of the metal particles surface-modified by the modifier were added to a solution of polyvinylidene fluoride (95 g) in dimethylacetamide to obtain a mixed slurry. The slurry is evenly coated on the surface of the silicon template, and after a vacuum degassing process, excess slurry is removed by sp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Heightaaaaaaaaaa
Bump heightaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a friction power generator employing a semiconductor composite material. The friction power generator comprises a first electrode layer, a first polymer material layer and a second electrode layer, which are laminated, wherein a material for the first polymer material layer is a metal-doped polymer semiconductor composite material. According to the friction power generator, an insulating polymer is doped with metal particles, so that the resistivity of the polymer is reduced, and the volume resistivity of the polymer is at a level between the volume resistivity of metal and the volume resistivity of an insulating material. According to the friction power generator, the working internal resistance of the power generator can be effectively reduced, and the load capacity of the friction power generator can be improved within a certain range.

Description

technical field [0001] The invention relates to the field of friction power generation, in particular to a friction generator using a metal-doped polymer semiconductor composite material. Background technique [0002] At present, the energy issue is one of the major issues affecting human progress and sustainable development. Various researches on new energy development and reusable renewable energy are being carried out in full swing all over the world. [0003] Energy harvesting and conversion devices constructed using tribotechnology play a key role in self-powered nanosystems. Moreover, due to its environmental protection, low cost, self-driving and other characteristics, it has received extensive attention. Since the piezoelectric friction generator developed by Professor Wang Zhonglin's research group realized the conversion of mechanical energy into electrical energy, friction generators with different structures and materials based on piezoelectricity and triboelec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02N1/04B32B3/30
Inventor 殷亮李洁王竹赵豪
Owner NEWNAGY TANGSHAN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com