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A kind of manufacturing method of tantalum target material

A manufacturing method and technology of tantalum target materials, which are applied in the field of tantalum target material manufacturing, can solve the problems of serious delamination of tantalum target materials and low internal deformation rate of tantalum ingots, so as to reduce process costs, improve internal structure, and avoid cracking Effect

Active Publication Date: 2017-06-30
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] In order to solve the above problems, the present invention provides a method for manufacturing a tantalum target, so as to overcome the defects of low deformation rate inside the tantalum ingot and serious internal delamination of the obtained tantalum target during the manufacturing process of the existing tantalum target.

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  • A kind of manufacturing method of tantalum target material
  • A kind of manufacturing method of tantalum target material
  • A kind of manufacturing method of tantalum target material

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Embodiment Construction

[0046] As mentioned in the background technology, based on the metal structure of tantalum metal itself, there will be obvious delamination inside the tantalum target formed by the traditional manufacturing process, which will affect the sputtering rate and stability of the target during the magnetron sputtering process , and thus reduce the film quality of tantalum thin films.

[0047] If the plastic deformation of the tantalum target is realized above the tantalum recrystallization temperature, the internal delamination phenomenon of the tantalum target can be alleviated, but the above-mentioned process requires high processing equipment such as hot rolling equipment, and the process conditions are harsh and difficult to operate. The yield rate of the tantalum target is low, and the above-mentioned process also greatly increases the production cost of the tantalum target.

[0048] For this reason, the present invention provides a method for manufacturing tantalum targets. In...

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Abstract

The invention provides a method for manufacturing a tantalum target material. The method comprises the following steps: firstly, carrying out hot forging on a tantalum ingot and then carrying out first annealing on the hot-forged tantalum ingot to form a first tantalum target material billet; rolling the first tantalum target material billet to form a second tantalum target material billet; and carrying out second annealing on the second tantalum target material billet to obtain the tantalum target material. The tantalum target material formed according to the technical scheme has fine internal grains and uniform internal microstructure and thus the defects such as delamination inside the tantalum target material are effectively avoided, the sputtering rate of the tantalum target material and the quality of the formed tantalum film in the subsequent use process are improved.

Description

technical field [0001] The invention relates to the field of semiconductor sputtering, in particular to a method for manufacturing a tantalum target. Background technique [0002] Tantalum, a metal element, is hard, ductile, and has a small coefficient of thermal expansion, and has extremely high corrosion resistance and toughness. Based on the above advantages, tantalum is widely used in chemical industry, microelectronics, electrical and other industrial fields. [0003] For example, in the field of microelectronics, tantalum is often used to prepare thin-film electrodes and interconnect lines of semiconductor devices. [0004] Specifically, tantalum is applied to the preparation of semiconductor devices by means of magnetron sputtering. The principle is to use physical vapor deposition technology (PVD) to bombard the tantalum target with high-pressure accelerated gaseous ions, so that the tantalum atoms on the tantalum target are sputtered out and deposited on the silic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/14C22F1/18C21D8/00
CPCC22F1/02C22F1/18C23C14/14C23C14/3414
Inventor 姚力军赵凯相原俊夫大岩一彦潘杰王学泽袁海军
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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