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Method for preparing low-bandgap ferroelectric photovoltaic thin films by pulsed laser deposition

A pulsed laser deposition, ferroelectric photovoltaic technology, applied in photovoltaic power generation, circuits, electrical components and other directions, to achieve the effect of less raw materials, convenient operation and simple preparation process

Inactive Publication Date: 2018-09-21
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] So far, there has been no literature report on the preparation (KNbO 3 ) 0.9 (BaNi 0.5 Nb 0.5 o 3 ) 0.1 (hereinafter referred to as KBNNO) ferroelectric photovoltaic thin film material method, the present invention innovatively utilizes pulsed laser deposition (PLD) method to prepare (KNbO 3 ) 0.9 (BaNi 0.5 Nb 0.5 o 3 ) 0.1 (KBNNO) Ferroelectric Photovoltaic Thin Film Materials

Method used

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  • Method for preparing low-bandgap ferroelectric photovoltaic thin films by pulsed laser deposition
  • Method for preparing low-bandgap ferroelectric photovoltaic thin films by pulsed laser deposition

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Embodiment 1

[0022] Using Pt / Ti / SiO 2 / Si(100) as the substrate, cleaned with acetone, absolute ethanol, and deionized water for 10 minutes in an ultrasonic cleaner with a working frequency of 40kHz, then dried with nitrogen and immediately placed in a vacuum chamber. Set the distance between the target stage and the sample stage to be 30mm, the substrate temperature to be 600°C, the oxygen pressure in the vacuum chamber to be 0Pa, the laser pulse energy to be 100mJ, the pulse laser frequency to be 1Hz, and the rotation speeds of the sample stage and the target stage to be 10r / min and Under the conditions of 5r / min and deposition time of 10 minutes, a low bandgap (KNbO 3 ) 0.9 (BaNi 0.5 Nb 0.5 o 3 ) 0.1 (KBNNO) Ferroelectric photovoltaic thin films.

Embodiment 2

[0024] Using Pt / Ti / SiO 2 / Si(100) was used as the substrate, cleaned with acetone, absolute ethanol, and deionized water for 10 minutes in an ultrasonic cleaner, and the operating frequency of the ultrasonic cleaner was 40kHz, then dried with nitrogen and immediately placed in a vacuum chamber. Set the distance between the target stage and the sample stage to be 30mm, the substrate temperature to be 700°C, the oxygen pressure in the vacuum chamber to be 0.01Pa, the laser pulse energy to be 100mJ, the pulse laser frequency to be 5Hz, and the rotation speed of the sample stage and the target stage to be 10r / min respectively And 5r / min, deposited for 20 minutes, prepared a low band gap (KNbO 3 ) 0.9 (BaNi 0.5 Nb 0.5 o 3 ) 0.1 (KBNNO) Ferroelectric photovoltaic thin films.

Embodiment 3

[0026] Using Pt / Ti / SiO 2 / Si(100) was used as the substrate, cleaned with acetone, absolute ethanol, and deionized water for 10 minutes in an ultrasonic cleaner, and the operating frequency of the ultrasonic cleaner was 40kHz, then dried with nitrogen and immediately placed in a vacuum chamber. Set the distance between the target stage and the sample stage to be 55 mm, the substrate temperature to be 700 °C, the oxygen pressure in the vacuum chamber to be 0 Pa, the laser pulse energy to be 300 mJ, the pulse laser frequency to be 5 Hz, and the rotation speeds of the sample stage and the target stage to be 10 r / min and Under the conditions of 5r / min and deposition time of 20 minutes, (KNbO 3 ) 0.9 (BaNi 0.5 Nb 0.5 o3 ) 0.1 (KBNNO) Ferroelectric photovoltaic thin films. figure 2 The relationship between the absorption coefficient of the film and the incident photon energy is shown, from which it can be known that the band gap (band gap) of the KBNNO film is about 1.4eV, whi...

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Abstract

The invention provides a method for preparing a low-band gap ferroelectric photovoltaic film through pulsed laser deposition. The method particularly comprises the following steps of: taking Pt / Ti / SiO2 / Si(100) as a substrate; cleaning for 10 minutes through an ultrasonic cleaner by sequentially using acetone, absolute ethyl alcohol and deionized water, wherein the working frequency of ultrasonic waves is 40 kHz; then blow-drying by using nitrogen, then immediately loading into a vacuum cavity, and determining the temperature of the substrate at 600-800 DEG C, the oxygen pressure of a vacuum chamber at 0-5 Pa, the energy of a laser pulse at 100-500 mJ and the frequency of the laser pulse at 1-20 Hz; ablating a ceramic target material to obtain a low-band gap film product. The method provided by the invention is a physical vapor deposition method, has the advantages of fewer selected raw materials, economy, no pollution, simple preparation process, convenience for operation and easiness for production, and opens up a fire-new way for developing a solar cell based on a ferroelectric semiconductor.

Description

technical field [0001] The invention relates to a method for preparing a low-bandgap ferroelectric photovoltaic thin film by pulse laser deposition. The method adopts pulsed laser deposition, a physical vapor deposition method, to prepare a low-bandgap ferroelectric photovoltaic film with good crystallinity and can absorb most visible light, and belongs to the field of photovoltaic materials and technology. Background technique [0002] Spontaneous polarization, one of the characteristics of ferroelectric materials, has great potential in solar cell applications, because the positive and negative charges (photogenerated carriers) generated by light absorption can be effective under the built-in electric field formed by spontaneous polarization. Separation, which makes them easier to collect efficiently. However, most known ferroelectric materials have relatively wide bandgap, that is, they only absorb high-energy photons that constitute a small part of the solar spectrum, s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/34H01L31/18
CPCC23C14/088C23C14/3435H01L31/1844Y02E10/544Y02P70/50
Inventor 何云斌徐芳黎明锴周桃生
Owner HUBEI UNIV
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