Light-emitting diode and its manufacturing method

Abstract

A method for manufacturing a light-emitting diode, comprising the following steps: providing a sapphire substrate, a plurality of protrusions are formed on the surface of the sapphire substrate; growing an undoped low-temperature GaN layer with uniform thickness on the surface of the sapphire substrate and the protrusions; An undoped high-temperature GaN layer is grown on the undoped low-temperature GaN layer, and the undoped high-temperature GaN layer does not completely cover the undoped low-temperature GaN layer, exposing the undoped low-temperature GaN layer on the top of the protrusion ; attaching silica nanospheres on the undoped low temperature GaN layer on top of the exposed protrusions; attaching on the undoped high temperature GaN layer and on the undoped low temperature GaN layer on top of the protrusions The undoped high-temperature GaN layer continues to grow on the silicon dioxide nanosphere until it covers the silicon dioxide nanosphere; on the undoped high-temperature GaN layer, an N-type GaN layer, an active layer and a P-type GaN layer are sequentially grown.

Description

technical field [0001] The invention relates to a method for manufacturing a light-emitting diode, in particular to a method for manufacturing a light-emitting diode and a corresponding light-emitting diode that can effectively reduce crystal defects and improve light extraction efficiency of components. Background technique [0002] A light emitting diode (Light-emitting diode, LED) is an optoelectronic semiconductor element that converts electric current into a specific wavelength range. Light-emitting diodes have the advantages of high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life, so they can be widely used as light sources in the field of lighting. [0003] During the epitaxial growth process of light-emitting diodes, how to reduce crystal defects of light-emitting diodes is a problem that people need to consider. One approach to fabricate low-defect LEDs is to use patterned sapphire subs...

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Problems solved by technology

However, in the above process, the defects of the epitaxial layer grown directly on the bottom of the protrusion will still extend upward during the epitaxy process, and when a patterned sapphire substrate is used, the defects tend to concentrate on the epitaxial layer at the top of the protrusion. In the crystal layer, thus affecting the growth of the subsequent epitaxial layer

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