Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance

A real-time feedback, electronic device technology, applied in nanostructure manufacturing, semiconductor/solid-state device manufacturing, nanostructure assembly, etc. Effect

Inactive Publication Date: 2015-02-18
SHENYANG JIANZHU UNIVERSITY
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the manufacturing technology of nanoelectronic devices is basically still in the laboratory stage, and the existing assembly and manufacturing technology cannot realize automation and low-cost manufacturing. This technical status is still a challenging problem that restricts the research and application of nanometer devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance
  • Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance
  • Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0020] 1. Pretreatment of nanomaterials: put ZnO nanowires and alcohol mixed solution at a ratio of 1:1000 into a test tube, put the test tube into an ultrasonic oscillator at 30 degrees Celsius for 10-15 minutes, then take it out and stand still for 1 hour to obtain a uniform Translucent solution, obtain a large number of ZnO nanowire samples dispersed in the solution as a single;

[0021] 2. Automatic assembly process based on a closed-loop control system: Since the distance between the source and drain electrodes is about 1 μm, it is equivalent to a capacitor in the circuit. When the ZnO nanowire is not overlapped, the AC signal can be transmitted through the electrode, and the DC signal will be blocked. ; When the medium is lapped at both ends of the electrode, the electrode and the medium are equivalent to a resistance, and both AC and DC signals can be ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the field of nano operation, in particular to a real-time feedback automatic assembling and manufacturing method for a nano-electronic appliance. According to the real-time feedback automatic assembling and manufacturing method, a closed-loop real-time detection assembling method is adopted, and driving signals with alternating current and direct current superposed are applied to microelectrodes through a signal generator, wherein alternating current signals serve as the driving signals, and direct current bias signals serve as detection signals; real-time feedback is achieved by scanning the jump of the direct current bias signals. A floating potential dielectrophoresis technique is adopted, and the problems that the effective assembling efficiency of the nano-electronic appliance is low and automatic and large-scale assembling is difficult to achieve are solved based on the closed-loop control concept; the real-time feedback automatic assembling and manufacturing method has the advantage that the physical and chemical features of nano conduits are not damaged; tiny changes of various kinds of force can be measured according to unique physical and chemical features of different nano materials.

Description

technical field [0001] The invention relates to the field of nanometer operation, in particular to an automatic assembly and manufacturing method of nanometer electronic devices with real-time feedback. Background technique [0002] Nanotechnology and nanodevices are one of the important development directions of today's high-tech. The breakthrough of nanotechnology and the application of nanodevices depend on the progress of nanofabrication technology. According to the December 2007 technical report (ITRS2007) of the International Technology Roadmap for Semiconductors (ITRS), by 2020, the half-pitch width of DRAM will be 14nm. With the continuous reduction of device size, it will be getting closer and closer to the limit of the existing electronic component architecture. The insurmountable problems encountered are not only the physical limit of electronic devices, but also precision automatic processing and power consumption. technical bottleneck. The traditional silicon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00B82B3/00
CPCB82B3/0042H01L21/00
Inventor 许可戚爰伟侯静李孟歆张颖
Owner SHENYANG JIANZHU UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products