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A kind of preparation method of tem sample

A sample, one-sided technology, applied in the field of TEM sample preparation, can solve problems such as the inability to eliminate the water droplet effect

Active Publication Date: 2017-03-08
WUHAN XINXIN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above problems, the present invention provides a method for preparing a TEM sample to solve the defect that the water droplet effect cannot be eliminated in the process of preparing a TEM sample by FIB in the prior art

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  • A kind of preparation method of tem sample
  • A kind of preparation method of tem sample
  • A kind of preparation method of tem sample

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Embodiment Construction

[0032] The core idea of ​​the present invention is to change the cutting orientation of the initial sample relative to the focused ion beam, so that the cutting direction of the focused ion beam is from the silicon substrate to the CT during the preparation of the TEM sample, so as to completely eliminate the water drop effect.

[0033] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0034] In order to eliminate the water droplet effect produced in the process of preparing TEM samples by FIB, the invention provides a method for preparing TEM samples.

[0035] Step S1, provide a traditional initial sample, the initial sample has figure 1 The silicon substrate 1 shown and several contact holes CT2 located on the upper surface of the silicon substrate are filled with one or more metal materials, and the upper surface of the contact holes is also covere...

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Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a TEM sample; an initial sample is fixed upside down on a substrate, and then cut with a focused ion beam to prepare a TEM sample; the technical solution changes the traditional TEM The cutting direction of the focused ion beam on the initial sample during sample preparation makes the cutting direction of the focused ion beam from the silicon substrate to the contact hole, thereby completely eliminating the interface layer at the junction of the contact hole and the silicon substrate when traditionally preparing TEM samples The water drop effect appears, so a fairly clear TEM picture can be obtained, which is convenient for subsequent defect analysis of the interface layer at the junction of the contact hole and the silicon substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a TEM sample. Background technique [0002] In the production process of semiconductors, transmission electron microscope (TEM) is an important electron microscope tool used to detect the shape, size and characteristics of the thin film of the device. Its working principle is to cut the sample, After grinding and thinning, put it into the TEM observation room, and irradiate the sample with a high-voltage accelerated electron beam to enlarge the shape of the sample, and finally form an image of the TEM sample, and observe, measure and analyze the image of the TEM sample. [0003] There are many ways to prepare TEM samples, among which the more common one is to use Focused Ion Beam (FIB) to prepare TEM samples. The traditional preparation method is to locate the target area through VC, and then use FIB method on the surface of the original...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N1/28
Inventor 郭伟仝金雨刘君芳李桂花李品欢
Owner WUHAN XINXIN SEMICON MFG CO LTD
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