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Preparation method of TEM sample

A sample, one-sided technology, applied in the field of TEM sample preparation, can solve the problem that the water drop effect cannot be eliminated

Active Publication Date: 2015-01-21
WUHAN XINXIN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0006] In view of the above problems, the present invention provides a method for preparing a TEM sample to solve the defect that the water droplet effect cannot be eliminated in the process of preparing a TEM sample by FIB in the prior art

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  • Preparation method of TEM sample
  • Preparation method of TEM sample

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Embodiment Construction

[0032] The core idea of ​​the present invention is to change the cutting orientation of the initial sample relative to the focused ion beam, so that the cutting direction of the focused ion beam is from the silicon substrate to the CT during the preparation of the TEM sample, so as to completely eliminate the water drop effect.

[0033] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, but it is not intended to limit the present invention.

[0034] In order to eliminate the water droplet effect produced in the process of preparing TEM samples by FIB, the present invention provides a preparation method of TEM samples.

[0035] Step S1, providing a traditional initial sample, the initial sample has figure 1 The silicon substrate 1 shown and a plurality of contact holes CT2 located on the upper surface of the silicon substrate are filled with one or more metal materials, and a metal interconnection layer 4 ...

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Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a preparation method of a TEM sample. The TEM sample is prepared by vertically reversing an initial sample, fixing the initial sample on a matrix and then cutting the initial sample through a focused ion beam. According to the technical scheme, the initial sample cutting direction of the focused ion beam in the conventional preparation process of the TEM sample is changed, so that the cutting direction of the focused ion beam ranges from a silicon substrate and a contact hole, the effect of water drops formed on an interface layer of a boundary between the contact hole and the silicon substrate in the conventional preparation process of the TEM sample is further eliminated, a quite clear TEM picture can be obtained, and the subsequent defect analysis of the interface layer of the boundary between the contact hole and the silicon substrate is facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a TEM sample. Background technique [0002] In the production process of semiconductors, the transmission electron microscope (TEM) is an important electron microscope tool used to detect the morphology, size and characteristics of the thin film of the device. After grinding and thinning, it is placed in the TEM observation chamber, and the sample is irradiated with a high-voltage accelerated electron beam to enlarge the morphology of the sample, and finally form an image of the TEM sample, and observe, measure and analyze the image of the TEM sample. [0003] There are many preparation methods for TEM samples, among which the more common one is to use Focused Ion Beam (FIB) to prepare TEM samples. The traditional preparation method is to locate the target area by VC, and then use FIB to prepare TEM samples in the original sample. The s...

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Application Information

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IPC IPC(8): G01N1/28
Inventor 郭伟仝金雨刘君芳李桂花李品欢
Owner WUHAN XINXIN SEMICON MFG CO LTD
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