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Laser and manufacturing method thereof

A manufacturing method and laser technology, applied in the field of lasers, can solve the problems of reducing the conversion efficiency of the carrier transport capability of the laser and the like

Active Publication Date: 2015-01-07
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this method can improve the above contradictory relationship to a certain extent, the problem of injecting carriers needs to overcome a high potential barrier to enter the active region, which greatly reduces the transport capacity of carriers and the conversion efficiency of the laser.

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  • Laser and manufacturing method thereof

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Embodiment Construction

[0007] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0008] figure 1 A schematic structural diagram of a laser proposed by the present invention is shown. Such as figure 1 As shown, the laser includes:

[0009] -N-type gallium arsenide substrate 10;

[0010] -N-type cladding layer 11, the N-type cladding layer 11 is fabricated on the N-type gallium arsenide substrate 10;

[0011] - superlattice layer 12, this superlattice layer 12 is made on the N-type cladding layer 11;

[0012] -N-type waveguide layer 13, the N-type waveguide layer 13 is made on the superlattice layer 12;

[0013] - active layer 14, this active layer 14 is made on the N-type waveguide layer 13;

[0014] - P-type waveguide layer 15, the P-type waveguide layer 15 is fabricated on the active layer 14; ...

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Abstract

The invention provides a laser and a manufacturing method of the laser. The laser comprises an N-type gallium arsenide substrate, an N-type covering layer manufactured on the obverse side of the N-type gallium arsenide substrate, a first super lattice crystal layer manufactured on the N-type covering layer, an N-type waveguide layer manufactured on the first super lattice crystal layer, an active layer manufactured on the N-type waveguide layer, a P-type waveguide layer manufactured on the active layer, a second super lattice crystal layer manufactured on the P-type waveguide layer, a P-type covering layer manufactured on the second super lattice crystal layer, a P-type ohmic contact layer manufactured on the P-type covering layer, a P-type ohmic electrode manufactured on the P-type ohmic contact layer, and an N-type ohmic electrode manufactured on the reverse side of the N-type gallium arsenide substrate (10). The super lattice crystal layers not only can provide a low refractive index potential barrier, but also has high current carrier transportation capacity, so that the laser has low threshold current, a small perpendicular divergence angle and high current carrier transportation capacity at the same time.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a laser with a special structure inserted into a superlattice layer to improve carrier transport and a manufacturing method thereof. Background technique [0002] With the rapid development of semiconductor optoelectronic devices, high-power semiconductor lasers came into being. Due to the advantages of small size, low price, high electro-optical conversion efficiency and long life of semiconductor lasers, semiconductor lasers have a very wide range of applications in the field of optoelectronics. Semiconductor lasers play an important role in the fields of industrial processing, medical treatment, military and theoretical research. Gallium arsenide is the most well-studied material so far compared to other semiconductor III-V materials. Therefore, people have the highest performance requirements for gallium arsenide lasers. This is reflected in the fact that gall...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/30H01S5/323
Inventor 李翔赵德刚朱建军陈平刘宗顺江德生
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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