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Gallium arsenide base mixing schottky diode millimeter wave and terahertz spectrum modeling method

A technology of Schottky diode and modeling method, applied in special data processing applications, instruments, electrical digital data processing, etc. The effect of accurate model and accelerated development speed

Active Publication Date: 2015-01-07
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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Problems solved by technology

However, none of the above methods corrected the model twice at the beginning of the design. In the actual process, several rounds of experiments are often needed to obtain better results.
In addition, because the millimeter wave and terahertz frequency bands are very wide, it is necessary to establish relevant models by sub-frequency bands, but the models established by sub-frequency bands have not been reported

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  • Gallium arsenide base mixing schottky diode millimeter wave and terahertz spectrum modeling method

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Embodiment Construction

[0026] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0027] GaAs-based mixed-frequency Schottky diode millimeter wave and terahertz frequency band modeling method, the specific steps are as follows:

[0028] The first step is to check the anode diameter of the GaAs-based mixed-frequency Schottky diode according to the design layout, and at the same time check the size of the anode of the GaAs-based mixed-frequency Schottky diode during the actual tape-out test, according to the size results of the scanning electron microscope test, and Calculate the junction capacitance of a Schottky diode using an empirical formula. The specific calculation formula is ,in represents the zero-bias junction capacitance, Represents the dielectric constant of the GaAs material, A represents the junction area of ​​the Schottky junction, D represents the diameter of the Schottky junction, represents ...

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Abstract

The invention discloses a gallium arsenide base mixing schottky diode millimeter wave and terahertz spectrum modeling method and relates to the diode modeling technical field. The gallium arsenide base mixing schottky diode millimeter wave and terahertz spectrum modeling method comprises describing the nonlinear junction characteristics of a mixing schottky diode junction through a measurement based empirical formula and namely performing the formula description on the diode junction through a thermionic emission model; establishing a three-dimensional electromagnetic model of a gallium arsenide base mixing schottky diode and obtaining an S parameter of parasitic parameters in the millimeter wave and terahertz spectrum through a commercial HFSS (High Frequency Structure Simulator); establishing a circuit level model corresponding to the gallium arsenide base mixing schottky diode in circuit simulation software such as ADS; performing comparison on the established model and the actual encapsulation testing diode S parameter, correcting the empirical formula of the diode junction and obtaining an accurate model of the gallium arsenide base mixing schottky diode in the millimeter wave and terahertz spectrum.

Description

Technical field [0001] The invention involves the field of diode construction technology. Background technique [0002] The THZ wave is an electromagnetic wave with the frequency within 0.3-3thz, of which 1THz = 1000GHz.THZ waves occupy a very special position in the electromagnetic wave spectrum. Taihez technology is a very important cross -cutting area recognized by the international science and technology community. [0003] At present, there are many research on the research work that use GAAS base hybrid frequency Schartki diode to conduct mixing related detection. The key to design of the mixing module is the model of the Schottky diode in the Tahez frequency band. The model is a bridge for craftsmanship and circuit design.The correctness of the model is related to the success or failure of the design. How to establish the precise model of the GAAS foundation frequency Schottky diode in the Tahez frequency band has become a very important issue. [0004] Since the 1990s, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 王俊龙杨大宝邢东梁士雄张立森赵向阳冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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