Odor-resistant and sun-resistant memory antistatic radiation protection fabric

An anti-static and anti-radiation technology, applied in the field of textile fabrics and fabrics, can solve the problems of insufficient sunlight fastness, easy to produce peculiar smell, fading, etc. The effect of memory function

Inactive Publication Date: 2015-01-07
JIANGYIN TIANCHENG TEXTILE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Textile products are indispensable for people's leisure life. Along with various needs, these items will be used in various occasions, including outdoors of course. Because the light fastness of traditional outdoor textile products is not high enough, After a period of exposure to the sun and washing, yellowing and fading will occur, which will affect the use and appearance of these textile products, and if they are serious, they will be useless, resulting in an unnecessary waste. Therefore, an outdoor sunscreen fabric appears It is especially important; at the same time, the existing sunscreen fabrics have poor air permeability, so after people wear this fabric, it is easy to produce peculiar smell and breed bacteria, which cannot meet people's needs
In addition, the traditional fabrics used to make clothing bodies do not have memory function, antistatic and anti-radiation effects at the same time.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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  • Odor-resistant and sun-resistant memory antistatic radiation protection fabric
  • Odor-resistant and sun-resistant memory antistatic radiation protection fabric
  • Odor-resistant and sun-resistant memory antistatic radiation protection fabric

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Embodiment Construction

[0027] see Figure 1-3 , the present invention relates to a memory antistatic anti-radiation fabric with deodorization and sun protection, which comprises a sun protection layer 1, a fiber layer 2, a woven fabric layer 3, a polyurethane film layer 5 and a knitted fabric layer 4 sequentially from the outside to the inside. Layer 1 and fiber layer 2, fiber layer 2 and woven fabric layer 3 are braided and connected to each other, the sun protection layer 1 is the outermost layer, the sun protection layer 1 is a nano-bamboo charcoal fiber layer, the thickness of the sun protection layer 1 is 10-50 μm, and the fiber layer 2 is The fiber used is polypropylene, which includes polypropylene warp yarn 2.1 and polypropylene weft yarn 2.2. The polypropylene warp yarn 2.1 and polypropylene weft yarn 2.2 are interlaced and tightly woven, and the polypropylene fiber itself is light in texture, high in strength, large in elongation, and high in initial modulus. Excellent elasticity, almost n...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Abstract

The invention relates to odor-resistant and sun-resistant memory antistatic radiation protection fabric. The odor-resistant and sun-resistant memory antistatic radiation protection fabric sequentially comprises a sun-resistant layer (1), a fiber layer (2), a woven fabric layer (3), a polyurethane film layer (5) and a knitted fabric layer (4) from exterior to interior; a base layer is composited on the back side of the knitted layer; the base layer adopts PTT (Polytrimethylene Terephthalate) memory color yarns to be warp yarns and adopts PET (Polyethylene Terephthalate) dacron fine denier shaped bright yarns to be weft yarns; the warp yarns and the weft yarns are woven to the fabric in a structure calvary twill wave of 3/1 of twill weave or 1/1 plain weave or 3/1 twill weave and 1/1 plain weave. The odor-resistant and sun-resistant memory antistatic radiation protection fabric has a sun-resistant function and is good in air permeability.

Description

technical field [0001] The invention relates to a fabric. It belongs to the technical field of textile fabrics. Background technique [0002] Textile products are indispensable for people's leisure life. Along with various needs, these items will be used in various occasions, including outdoors of course. Because the light fastness of traditional outdoor textile products is not high enough, After a period of exposure to the sun and washing, yellowing and fading will occur, which will affect the use and appearance of these textile products, and if they are serious, they will be useless, resulting in an unnecessary waste. Therefore, an outdoor sunscreen fabric appears It is particularly important; simultaneously the existing sun-proof fabric has poor air permeability, so after people put on this fabric, it is easy to produce peculiar smell and breed bacteria, which cannot satisfy people's needs. In addition, the traditional fabrics used to make clothing bodies do not have me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): D03D15/00D03D13/00B32B33/00A41D31/02D03D15/283D03D15/37D03D15/54
CPCA41D31/02D03D13/00D03D15/00B32B33/00
Inventor 顾方钟
Owner JIANGYIN TIANCHENG TEXTILE
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