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Calculation method of deviation rate and method for secondary ion mass spectrometry

A technology of secondary ion mass spectrometry and calculation methods, which is applied in the field of semiconductor manufacturing, can solve the problems of incomplete analysis of ion implantation results, etc., and achieve the effect of shortening the detection time of re-machines and saving use

Active Publication Date: 2014-12-24
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0009] The purpose of the present invention is to provide a calculation method of deviation rate and a secondary ion mass spectrometry analysis method to solve the problem of incomplete analysis of ion implantation results in the prior art

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  • Calculation method of deviation rate and method for secondary ion mass spectrometry
  • Calculation method of deviation rate and method for secondary ion mass spectrometry
  • Calculation method of deviation rate and method for secondary ion mass spectrometry

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Embodiment Construction

[0040] It has been mentioned in the background technology that at present, due to the incomplete analysis method, the inconsistency of the SIMS image caused by the angle deviation of ion implantation cannot obtain effective results. The inventor found in the research that the angle of ion implantation The image fluctuation caused by the deviation is acceptable within a certain range, and further research shows that the angle deviation of ion implantation has a fixed relationship with the image, which is called the deviation rate and is denoted as K. After using the deviation rate, it can effectively solve the problem that it is difficult for technicians to judge whether the result is acceptable when there is a slight abnormality in the SIMS image.

[0041] The calculation method of the deviation rate and the secondary ion mass spectrometry analysis method provided by the present invention will be further described in detail below in conjunction with the accompanying drawings an...

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Abstract

The invention discloses a calculation method of deviation rate and a method for secondary ion mass spectrometry. According to the invention, a sample to be tested and a standard sample are provided, and the sample to be tested and the standard sample are integrated in a same coordinate system; under the situation of guaranteeing regional area and curvature unchanged, the sample to be tested and the standard sample undergo Gaussian smoothing treatment; the treated sample to be tested and the treated standard sample undergo point-to-point division treatment so as to obtain a fitted curve; an available region is restricted in the fitted curve; deviation rate is obtained according to the available region; deviation rate which is proportional to ion implantation angle deviation is obtained so as to definitely judge whether equipment needs to be maintained and save time and consumable items; and early minimal abnormity of an ion implanter can be detected and improvement direction can be provided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a calculation method of deviation rate and a secondary ion mass spectrometry (Secondary Ion Mass Spectroscopy, SIMS) method. Background technique [0002] Secondary ion mass spectrometry (SIMS) is an analysis method that uses mass spectrometry to analyze the secondary ions generated by sputtering after the primary ions enter the target, so as to obtain the elemental information of the surface or depth profile of the material. [0003] SIMS can analyze all elements including hydrogen and can give isotope information, and analyze compound components and molecular structures. Secondary ion mass spectrometry has high sensitivity, which can reach the order of ppm or even ppb. In the semiconductor manufacturing industry, it is mainly used to provide data basis for the inspection of limited process and the development of more advanced process. [0004] The accuracy of ion im...

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Application Information

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IPC IPC(8): G01N23/225
Inventor 史江北李震远郑晓刚李爱民刘竞文
Owner SEMICON MFG INT (SHANGHAI) CORP
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