FPGA (Field Programmable Gate Array) based high-voltage series connection (Insulated Gate Bipolar Transistor) gate driving unit and method

Abstract

The invention discloses an FPGA (Field Programmable Gate Array) based high-voltage series connection (Insulated Gate Bipolar Transistor) gate driving unit and method. The gate driving unit comprises an FPGA, a trigger shutdown circuit which is electrically connected with the FPGA, a voltage monitoring loop, a self-created circuit, a dynamic voltage-sharing circuit, a static voltage-sharing circuit and a photovoltaic conversion circuit; the FPGA monitors real-time voltage at two ends of an IGBT and whether IGBT states are normal or not through the voltage monitoring loop and controls storage capacitance inside the self-created circuit through the voltage at two ends of the IGBT; the photovoltaic conversion circuit is connected with a valve control device through an optical fiber, receives IGBT trigger and shutoff signals sending from the valve control device and sends IGBT operation states to the valve control device. The gate driving unit simultaneously achieves complex logic functions such as self-created energy, voltage sharing, working condition monitoring, triggering, shutdown, command receiving and status information returning, is simple and reliable in hardware structure and low in failure rate and guarantees reliable and stable operation of the IGBT.

Description

technical field [0001] The invention belongs to the field of power electronics, in particular to a high-voltage serial IGBT gate drive unit based on a Field Programmable Gate Array (FPGA). Background technique [0002] In high-voltage and high-power converters, power devices must have a high withstand voltage value, but currently a single device cannot meet this requirement. Using multiple power switching devices directly in series is a simple way to solve this problem. Due to the differences in the internal parameters of each series IGBT and the time and amplitude of the turn-on and turn-off drive pulses, in practical applications, there will be dynamic and steady-state voltage unevenness between the series devices, which will lead to overvoltage and damage the equipment in severe cases. Therefore, it is very necessary to research and realize the driving control method of multiple IGBTs directly connected in series. [0003] The inconsistency of the delay of the drive sig...

AI Technical Summary

Problems solved by technology

[0004] At present, most domestic applications directly purchase IGBT drive and control devices produced by large foreign companies, and they all use off-the-shelf drive chips to realize monitoring, control and protection functions. The logic is relatively simple and the reliability is low.

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