Praseodymium-doped indium silicate luminescent film, preparing method thereof and electroluminescent device

A technology of luminescent film and indium silicate, which is applied in the direction of electroluminescent light source, luminescent material, electrical components, etc.

Inactive Publication Date: 2014-12-03
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still no report on the use of indium silicate luminescent materials to prepare electroluminescent thin films.

Method used

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  • Praseodymium-doped indium silicate luminescent film, preparing method thereof and electroluminescent device
  • Praseodymium-doped indium silicate luminescent film, preparing method thereof and electroluminescent device

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Experimental program
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Effect test

Embodiment 1

[0027] Choose MgO, In 2 o 3 , SiO 2 and Pr 2 o 3 The powder, whose molar ratio is 1:0.99:2:0.01, is uniformly mixed, and then sintered at 1250°C to form a Φ50×2mm ceramic target, and the target is loaded into a vacuum chamber. Then, the glass substrate with ITO was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, treated with oxygen plasma, and placed in a vacuum chamber. The distance between the target and the substrate is set to 60mm. Use a mechanical pump and a molecular pump to pump the vacuum of the cavity to 5.0×10 -4 Pa, the working gas flow rate of oxygen is 20sccm, the pressure is adjusted to 3Pa, the substrate temperature is 500°C, and the laser energy is 150W, the sample MgIn 1.98 Si 2 o 8 :0.02Pr 3+ Glowing film.

Embodiment 2

[0029] Choose MgO, In 2 o 3 , SiO 2 and Pr 2 o 3 The powder, whose molar ratio is 1:0.975:2:0.025, is uniformly mixed and sintered at 900°C to form a Φ50×2mm ceramic target, and the target is placed in a vacuum chamber. Then, the glass substrate with ITO was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, treated with oxygen plasma, and placed in a vacuum chamber. The distance between the target and the substrate was set to 45 mm. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 1.0×10 -3 Pa, the working gas flow rate of oxygen is 10sccm, the pressure is adjusted to 0.5Pa, the substrate temperature is 250°C, and the laser energy is 80W, the sample MgIn 1.95 Si 2 o 8 :0.05Pr 3+ Glowing film.

Embodiment 3

[0031] Choose MgO, In 2 o 3 , SiO 2 and Pr 2 o 3The powder, whose molar ratio is 1:0.995:2:0.005, is uniformly mixed and sintered at 1300°C to form a Φ50×2mm ceramic target, and the target is loaded into a vacuum chamber. Then, the glass substrate with ITO was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, treated with oxygen plasma, and placed in a vacuum chamber. The distance between the target and the substrate is set to 95mm. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 1.0×10 -5 Pa, the working gas flow rate of oxygen is 40sccm, the pressure is adjusted to 5Pa, the substrate temperature is 750°C, and the laser energy is 300W, the sample MgIn 1.99 Si 2 o 8 :0.01Pr 3+ Glowing film.

[0032] figure 1 For the EL spectrogram of the luminescent film sample that embodiment 3 makes; From figure 1 It can be seen that there is a strong luminescence peak at the position of 625nm.

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Abstract

The invention belongs to the field of photoelectric materials, and discloses praseodymium-doped indium silicate luminescent film, a preparing method thereof and an electroluminescent device. The general chemical formula of the luminescent film is MeIn<2-x>Si2O8:xPr<3+>, wherein the MeIn<2-x>Si2O8 is a substrate, the Pr<3+> is an activating optical ion and is the luminescent center of the luminescent film, the Me is selected from Mg, Ca, Sr or Ba, and the x is 0.01-0.05. In an electroluminescence (EL) spectrum of the luminescent film, a strong luminescence peak is formed at 625 nm.

Description

technical field [0001] The invention relates to the field of photoelectric materials, in particular to a luminescent thin film of praseodymium-doped indium silicate and a preparation method thereof. The invention also relates to an electroluminescent device using the luminescent thin film as a luminescent layer. Background technique [0002] Thin film electroluminescent display (TFELD) has attracted widespread attention and developed rapidly due to its advantages such as active light emission, full solid state, impact resistance, fast response, large viewing angle, wide application temperature, and simple process. At present, the research on color and even full-color TFELD and the development of multi-band luminescent materials are the development direction of this subject. [0003] In the research of LED phosphors, the excitation spectrum of rare earth-doped indium silicate phosphors can better match the existing near-ultraviolet, and the emission spectrum of LEDs can be w...

Claims

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Application Information

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IPC IPC(8): C09K11/62H05B33/14
Inventor 周明杰陈吉星王平张娟娟
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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