Europium and terbium-co-doped vanadite luminescent thin film and preparation method and application thereof

A vanadite, light-emitting thin film technology, used in light-emitting materials, chemical instruments and methods, semiconductor devices, etc.

Inactive Publication Date: 2015-01-14
OCEANS KING LIGHTING SCI&TECH CO LTD +2
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still no report on the europium-terbium co-doped vanadite light-emitting film that can be applied to thin-film electroluminescent displays.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Europium and terbium-co-doped vanadite luminescent thin film and preparation method and application thereof
  • Europium and terbium-co-doped vanadite luminescent thin film and preparation method and application thereof
  • Europium and terbium-co-doped vanadite luminescent thin film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0014] The method for preparing the above-mentioned europium-terbium co-doped vanadite luminescent film includes the following steps:

[0015] S11, according to Me 3 (VO 4 ) 2 : XEu 3+ ,yTb 3+ The stoichiometric ratio of each element is called MeO, V 2 O 5 , Eu 2 O 3 And Tb 4 O 7 The powder is mixed uniformly and sintered at 900℃~1300℃ to make the target material.

[0016] x is 0.01 to 0.05, y is 0.01 to 0.04, and Me is Mg, Ca, Sr or Ba.

[0017] In S11, preferably, MeO, V 2 O 5 , Eu 2 O 3 , And Tb 4 O 7 The powder is mixed uniformly and sintered at 1250℃ to make a ceramic target of Ф50mm×2mm.

[0018] S12. After the substrate is provided and the substrate is preprocessed, the target and substrate obtained in S11 are loaded into the vacuum chamber of the magnetron sputtering coating equipment, and adjusted to 1.0×10 -3 Pa~1.0×10 -5 Pa.

[0019] The operation of preprocessing the substrate may be: ultrasonically cleaning the substrate with acetone, absolute ethanol and deionized water in...

Embodiment 1

[0054] According to the molar amount of 3mmol, 1mmol, 0.015mmol, 0.005mmol, choose MgO, V 2 O 5 , Eu 2 O 3 And Tb 4 O 7 After the powder is uniformly mixed, it is sintered into a ceramic target of Ф50mm×2mm at 1250°C, and the target is put into a vacuum chamber. The glass substrate with ITO was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, and treated with oxygen plasma, and put into a vacuum chamber. Set the distance between the target and the substrate to 60 mm. Use mechanical pump and molecular pump to pump the vacuum of the cavity to 5.0×10 -4 Pa, the working flow of argon is 25sccm, the pressure is adjusted to 2.0Pa, the substrate temperature is 500°C, and the power of the magnetron sputtering coating equipment is 180W. By controlling the magnetron sputtering time to 20min, the chemical formula with a thickness of 220nm is Mg 3 (VO 4 ) 2 : 0.03Eu 3+ ,0.02Tb 3+ The europium and terbium co-doped vanadite luminescent thin film was the...

Embodiment 2

[0058] According to the molar amount of 3mmol, 1mmol, 0.005mmol, 0.0025mmol, choose MgO, V 2 O 5 , Eu 2 O 3 And Tb 4 O 7 After the powder is uniformly mixed, it is sintered into a ceramic target of Ф50mm×2mm at 900°C, and the target is put into a vacuum chamber. The glass substrate with ITO was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, and treated with oxygen plasma, and put into a vacuum chamber. Set the distance between the target and the substrate to 45 mm. Use mechanical pump and molecular pump to pump the vacuum of the cavity to 1.0×10 -3 Pa, the working flow of argon is 10sccm, the pressure is adjusted to 0.2Pa, the substrate temperature is 250℃, the power of the magnetron sputtering coating equipment is 60W, and the magnetron sputtering time is 10min to obtain a thickness of 60nm The chemical formula is Mg 3 (VO 4 ) 2 :0.01Eu 3+ ,0.01Tb 3+ The europium and terbium co-doped vanadite luminescent thin film was then annealed in a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a europium and terbium-co-doped vanadite luminescent thin film and a preparation method and application thereof. The chemical general formula of the material of the europium and terbium-co-doped vanadite luminescent thin film is Me3(VO4)2: xEu<3+>, yTb<3+>, wherein Me3(VO4)2 is a matrix, a Eu element and a Tb element are active elements, x is 0.01-0.05, y is 0.01-0.04, and Me is Mg, Ca, Sr or Ba. In an electroluminescence spectrum (EL) of the europium and terbium-co-doped vanadite luminescent thin film (Me3(VO4)2: xEu<3+>, yTb<3+>), very strong luminescence peaks occur in 490nm and 510nm wavelength regions, and the europium and terbium-co-doped vanadite luminescent thin film can be applied to a thin film electroluminescent device. The invention further discloses a preparation method of the europium and terbium-co-doped vanadite luminescent thin film, the thin film electroluminescent device using the europium and terbium-co-doped vanadite luminescent thin film and a preparation method of the thin film electroluminescent device.

Description

Technical field [0001] The invention relates to the field of luminescent materials, in particular to a europium-terbium co-doped vanadite luminescent film, a preparation method thereof, a thin-film electroluminescence device and a preparation method thereof. Background technique [0002] Thin film electroluminescence displays (TFELD) have attracted widespread attention due to their active luminescence, full solidification, impact resistance, fast response, large viewing angle, wide applicable temperature, and simple process, etc., and they are developing rapidly. At present, researching color and full-color TFELD and developing multi-band luminescent materials are the development direction of this subject. However, there is still no report on the Europium-terbium co-doped vanadite luminescent film that can be applied to thin-film electroluminescence displays. Summary of the invention [0003] Based on this, it is necessary to provide a europium-terbium co-doped vanadite luminesce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/69H01L33/50H01L33/00
Inventor 周明杰陈吉星王平冯小明
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products