Broadband balance power amplifier based on GaN

Abstract

The invention discloses a broadband balance power amplifier based on GaN. The broadband balance power amplifier based on the GaN comprises a Lange coupler, a microstrip transmission line, a Banding metal wire, a filter inductor, a stabilizing resistor and a wide band gap GaN-based HEMT. A biasing circuit of the power amplifier comprises a T-shaped connector, the microstrip transmission line, the filter inductor, the stabilizing resistor and the GaN-based HEMT, the GaN-based HEMT (H) is an HEMT pipe core with the type of NRF01-02a, and a four-line 3dB coupling Lange coupler with the characteristic impedance of 50 ohms is selected and used as the Lange coupler. The broadband balance power amplifier based on the GaN is simple in structure and low in cost, the Lange coupler is adopted for constructing the structure of the balance power amplifier, a multi-section impedance matching technology is adopted for designing an input / output matching network, the power amplifier broadband characteristics are achieved, and within the 115-315 GHz frequency band, the power amplifier linear gain is larger than 12 dB, and the saturation output power is larger than 8 W.

Description

technical field [0001] The invention belongs to the technical field of power electronics application, and in particular relates to a GaN-based broadband balanced power amplifier. Background technique [0002] The power amplifier is an extremely important component in the transmitter of communication, radar, navigation and other systems. Through the power amplifier, the small signal fed from the front end will be amplified to the power required by the system, and then complete the signal transmission, long-distance transmission and stable reception. Therefore, the performance of the power amplifier determines the technical level and final index of the system. According to the current technical level, traveling wave tubes and various semiconductor devices are mainly used in the development of millimeter wave power amplifiers. Among them, traveling wave tubes are mostly used in high-power fields, and semiconductor devices are mostly used in small and medium power amplifiers....

AI Technical Summary

Problems solved by technology

[0004] At present, the more commonly used design technique for wideband power amplifier is distributed or traveling wave amplifier method, which adopts linear design method to ensure linearity, gain flatness and high return loss in the whole frequency band. However, this technique requires multiple tubes Therefore, it has disadvantages such as high cost, large scale, and low efficiency. Use harmonically tuned amplifiers such as class J and class F, or use switch mode amplifiers such as class E, class D, and inverse class F , although the power amplifier efficiency can be significantly improved, the harmonic tuning performance in the required frequency band is reduced, making this type of power amplifier usually only suitable for narrowband applications, not suitable for wideband (one octave) power amplifier design

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