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Flip LED chip and packaging method thereof

An LED chip and flip-chip technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high cost, many packaging steps, and poor heat dissipation effect.

Inactive Publication Date: 2014-10-22
SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] The current flip-chip LED chip has many packaging steps, high cost, and poor heat dissipation

Method used

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  • Flip LED chip and packaging method thereof

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Embodiment Construction

[0015] Hereinafter, the invention will now be described more fully with reference to the accompanying drawings, in which various embodiments are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0016] Hereinafter, exemplary embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

[0017] Reference attached Figure 1-2 , a flip-chip LED chip, a transparent substrate, an N-type GaN layer, a carrier recombination layer, and a P-type GaN layer are stacked in sequence. The N electrode and P of the flip-chip LED chip made by a series of processes

[0018] The electrodes are connected to the metal connection point of the substrate to form a light-emitting ...

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Abstract

The invention relates to a flip LED chip and a packaging method thereof. The invention relates to the related field of LED technology, and mainly relates to a flip chip, a heat radiation base and substrates. The flip LED chip includes a transparent substrate, an N type GaN layer, a carrier composite layer, and a P type GaN layer which are superposed in sequence. An N type electrode, a P type electrode and an insulating layer which separate the N type electrode and the P type electrode are manufactured on the surface of the chip. The substrates are made of various materials, and each substrate contains a metal connection point and a circuit connected with the outside. The electrodes of the chip can adopt various methods to be connected with the metal connection points of the substrates to manufacture a light emitting diode, and the light emitting diode is put into a housing coated with fluorescent powder to obtain a light emitting device. The light emitting device obtained by the invention has the characteristics of high power, good heat radiation effect, optimized packaging technology, saved production cost and the like.

Description

technical field [0001] The invention relates to a flip-chip LED chip and a packaging method thereof, belonging to the field of LED semiconductors. Background technique [0002] The current flip-chip LED chip has many packaging steps, high cost, and poor heat dissipation effect. Contents of the invention [0003] The invention relates to a flip-chip LED chip, the chip includes a transparent substrate, an N-type GaN layer, a carrier recombination layer, and a P-type GaN layer stacked in sequence; the N electrode and the P electrode of the chip are connected to the substrate metal Points connected to make light-emitting diodes. [0004] The present invention also provides a packaging method for flip-chip LED chips, which includes the following steps: [0005] 1) U-shaped pattern is used to etch to the N-type GaN layer, and the etching depth is about 0.5-2um; [0006] 2) Evaporate ITO or Ni\Ag on the P surface, with a thickness of about 0.1-0.2 μm; [0007] 3) Evaporate on...

Claims

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Application Information

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IPC IPC(8): H01L33/48H01L33/62H01L33/64
CPCH01L33/38H01L33/483H01L33/507H01L33/62H01L33/641H01L33/647H01L2933/0016H01L2933/0033H01L2933/0041H01L2933/0075
Inventor 韩蕊蕊马淑芳梁建田海军徐小红王金良
Owner SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCI & TECH
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