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High-voltage light emitting diode chip and manufacturing method thereof

A technology of high-voltage light-emitting and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of inability to connect the overall diode, disconnection of metal wires, low luminous efficiency, etc. The effect of increasing single-chip output and low production cost

Active Publication Date: 2014-10-08
湖北三安光电有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are many problems in this kind of integrated light-emitting device: including low luminous efficiency, difficult heat dissipation, low power, and reliability problems
The metal wires in series need to cross the ditches with huge height difference, which is prone to the problem of metal wire disconnection in production, resulting in the problem that the whole diode cannot be connected

Method used

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  • High-voltage light emitting diode chip and manufacturing method thereof
  • High-voltage light emitting diode chip and manufacturing method thereof
  • High-voltage light emitting diode chip and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Please refer to Figure 1~6 , the present invention is a schematic flow diagram of making a high-voltage light-emitting diode chip, and its implementation steps include:

[0061] Please refer to figure 1 , providing a substrate 101 for epitaxial growth, preferably a sapphire insulating substrate, aluminum nitride or other non-conductive substrates can also be selected; a light-emitting epitaxial stack is formed on the substrate 101 through a metal organic compound chemical vapor deposition process , comprising an N-type semiconductor layer 102, a light emitting layer 103 and a P-type semiconductor layer 104 in order from bottom to top;

[0062] Please refer to figure 2 , using a dry / wet etching process to pattern the light-emitting epitaxial stack and form a V-shaped ultra-narrow trench 105 until the surface of the substrate 101 is exposed, thereby separating the light-emitting epitaxial stack into a plurality of circular light-emitting units (There are only 2 light...

Embodiment 2

[0070] Please refer to Figure 7~12 , the present invention is a schematic flow diagram of making a high-voltage light-emitting diode chip, and its implementation steps include:

[0071] Please refer to Figure 7 , providing a substrate 201 for epitaxial growth, preferably a sapphire insulating substrate; through a metal organic compound chemical vapor deposition process, a light-emitting epitaxial stack is formed on the substrate 201, including an N-type semiconductor layer 202, a light-emitting layer from bottom to top Layer 203 and P-type semiconductor layer 204;

[0072] Please refer to Figure 8 , using a dry / wet etching process to pattern the light-emitting epitaxial stack and form a V-shaped ultra-narrow trench 205 until the surface of the substrate 201 is exposed, thereby separating the light-emitting epitaxial stack into a plurality of rectangular light-emitting units , forming a light-emitting diode wafer in this way, wherein the light-emitting unit sequentially i...

Embodiment 3

[0079] Please refer to Figure 13 , compared with Embodiment 2, the electrode interconnection wire 309 of this embodiment straddles the opening end of the ultra-narrow trench and is not attached to the sidewall in the ultra-narrow trench, but does not extend to the corresponding On the sidewall of part of the light-emitting epitaxial stack adjacent to the light-emitting unit, the electrode interconnection line 309 connects the adjacent light-emitting units in parallel through the N electrode 307 of the adjacent light-emitting unit. Since the liquid conductive material layer is introduced, after solidification, it directly straddles the opening end of the ultra-narrow trench and does not adhere to the sidewall in the ultra-narrow trench, so the conventional light-emitting epitaxy stack side can be omitted. The insulating material layer between the wall and the electrode interconnection wires simplifies the manufacturing process and saves manufacturing costs.

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PUM

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Abstract

The invention discloses a high-voltage light emitting diode chip and a manufacturing method of the high-voltage light emitting diode chip. A liquid insulating material layer or a liquid conducting material layer is introduced and then solidified for insulation or bridge connection, and the widths of isolation grooves between light emitting units can be ultra narrow, wherein the widths of openings are smaller than or equal to 0.3 micrometer, so that single chip output is increased, the area of an effective light emitting region is expanded, and light emitting efficiency is improved; the problem that a traditional high-voltage light emitting diode metal wire is prone to breakage when striding over a channel with the large fall is solved, and the series / parallel bridging yield is increased; in addition, the manufacturing method can be achieved at a chip manufacturing end, and manufacturing cost is low.

Description

technical field [0001] The invention relates to a high-voltage light-emitting diode chip and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (LED in English) is a kind of semiconductor diode, which can convert electrical energy into light energy, and emit visible light of various colors such as yellow, green, and blue, as well as infrared and ultraviolet invisible light. Compared with incandescent bulbs and neon lamps, it has the advantages of low working voltage and current, high reliability, long life and convenient adjustment of luminous brightness. Since the successful development of LED, with the continuous progress of research, its luminous brightness has also been continuously improved, and its application fields have become wider and wider. [0003] In recent years, in response to lighting needs, high-power LEDs have become the focus of development by various factories. Traditional formal-mounted high-power LEDs mostly use a singl...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/48H01L33/62
CPCH01L33/48H01L2933/0033H01L27/156H01L2933/0066H01L33/62H01L27/15H01L27/153H01L33/22H01L33/42H01L2933/0016
Inventor 吴厚润郑建森徐宸科何安和李佳恩
Owner 湖北三安光电有限公司
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