Antireflective film for solar cell piece and manufacturing method thereof

Abstract

The invention provides an antireflective film for a solar cell piece and a manufacturing method of the antireflective film. The antireflective film for the solar cell piece comprises a first silicon nitride layer covering the surface of the solar cell piece, a second silicon nitride layer covering the upper surface of the first silicon nitride layer and a third silicon nitride layer covering the upper surface of the second silicon nitride layer. By means of the antireflective film for the solar cell piece, the three layers of silicon nitride antireflective films are adopted, the good passivating effect can be achieved, the short-circuit current of the metallurgical polycrystalline silicon cell pieces can be improved, the reverse leakage current can be reduced, and photovoltaic conversion efficiency is improved. Meanwhile, according to the manufacturing method of the antireflective film, an intermittent deposition technology is adopted, that is, a certain dead time is added between depositions of the two layers of silicon nitride thin films, so that the growth of all layers of silicon nitride thin films is complete as much as possible, the manufactured metallurgical polycrystalline silicon cells are more even in color of appearance, the chromatic aberration rate of the surfaces of the cell pieces is reduced by about 5% from the original 30%, and the yield of the metallurgical polycrystalline silicon cells is improved greatly.

Description

technical field [0001] The invention relates to the technical field of solar energy utilization, in particular to an anti-reflection film used for solar cells and a manufacturing method thereof. Background technique [0002] Over the years, crystalline silicon solar cells have occupied about 90% of the photovoltaic market due to their high cost performance. The conventional chemical method (improved Siemens method) to purify solar-grade silicon materials has a mature production process and high purity, but there are problems such as high cost, heavy pollution and low production capacity, which prompts people to look for new low-cost and high-production purification technologies. In recent years, physical metallurgical polysilicon purification technology has been re-emphasized and developed rapidly. At present, the purity of polysilicon purified by this technology has basically reached the 6N level required by the photovoltaic level. Although domestic polysilicon purificati...

AI Technical Summary

Problems solved by technology

Although the double-layer silicon nitride film has significantly improved the problems caused by only a single-layer silicon nitride film, enhanced the anti-reflection effect on light, and improved the short-circuit current of the battery, but the biggest problem with the double-layer silicon nitride film is The anti-reflection effect in the short-wave direction is poor, so the deposition process must be continuously improved and optimized

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