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Molybdenum disulfide/silicon heterogeneous film component with hydrogen sensitivity effect as well as preparation method and application thereof

A technology of molybdenum disulfide and thin-film devices, which is applied in the direction of instruments, scientific instruments, measuring devices, etc., can solve problems such as resistance changes, and achieve the effects of high reliability, elimination of dependencies, and simple preparation process

Inactive Publication Date: 2014-09-17
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The reported theoretical calculation results show that: MoS 2 Easy to H 2 Adsorption occurs and causes a significant change in its resistance
This calculation shows that the MoS 2 Can be used to develop H 2 sensors, but there are no reports of relevant test results at home and abroad

Method used

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  • Molybdenum disulfide/silicon heterogeneous film component with hydrogen sensitivity effect as well as preparation method and application thereof
  • Molybdenum disulfide/silicon heterogeneous film component with hydrogen sensitivity effect as well as preparation method and application thereof
  • Molybdenum disulfide/silicon heterogeneous film component with hydrogen sensitivity effect as well as preparation method and application thereof

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Embodiment Construction

[0027] The present invention utilizes DC magnetron sputtering technology to deposit MoS on Si semiconductor substrate 2 thin film layer, thus forming the MoS 2 / Si heterojunction. When exposed to H 2 atmosphere, due to the H 2 Adsorption occurs, MoS 2 The carriers and Fermi levels of the film are changed, which leads to the MoS 2 The junction resistance of the / Si heterojunction changes significantly, so that the prepared MoS 2 / Si heterojunction pair H 2 Demonstrates a noticeable responsiveness.

[0028] Next to MoS 2 / Si heterogeneous thin film device structure, preparation method and application are described in detail.

[0029] MoS of the present invention 2 / Si heterogeneous thin film structures, including MoS 2 Semiconductor thin film layer and Si semiconductor substrate, MoS 2 The thin film layer is arranged on the surface of the Si substrate. The Si substrate is a p-type Si single crystal substrate with a resistivity of 1-10Ωcm -1 , the crystal orientation...

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Abstract

The invention discloses a molybdenum disulfide (MoS2) / silicon (Si) heterogeneous film component with a hydrogen sensitivity effect as well as a preparation method and application thereof. The MoS2 / Si heterogeneous film component comprises a Si substrate and a MoS2 film layer which is deposited on the surface of the Si substrate by a direct current magnetron sputtering technology. According to the preparation method, by depositing the MoS2 film on the surface of the Si substrate, the MoS2 / Si heterogeneous film component having an H2 sensitivity effect is prepared by virtue of H2 adsorption of the MoS2 film and electrical transport amplification action of a semiconductor heterogeneous interface. Test results show that under the condition of pure H2, when impressed voltage is -5V, the electric current of the MoS2 / Si heterogeneous film component is reduced by two orders of magnitude; meanwhile, the heterogeneous film component shows obvious response to H2 concentration change. Compared with an existing semiconductor type H2 sensing component, the MoS2 / Si heterogeneous film component has advantages of having obvious H2 response performance, and being good in repeatability, high in reliability and free of dependence on oxygen atmosphere condition and noble metal.

Description

technical field [0001] The invention belongs to the field of nano-semiconductor technology, and relates to semiconductor thin film preparation and device processing technology, in particular to a molybdenum disulfide / silicon heterogeneous thin film device with a hydrogen sensitive effect and its preparation method and application. Background technique [0002] As a reducing and carrier gas, H 2 Has been widely used in petrochemical, electronics, medical, aviation and other fields. At the same time, H 2 As a new type of efficient and clean energy, it has also attracted widespread attention and a lot of research. However, hydrogen molecules are very small and are prone to leakage during production, transmission and use. When H in the air 2 When the content reaches 5% to 75%, it can explode violently under open flame conditions. Therefore, the rapid and accurate in situ measurement of hydrogen content in air and specific environments has great application value and also ha...

Claims

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Application Information

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IPC IPC(8): G01N27/414
Inventor 郝兰众刘云杰高伟于濂清
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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