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Negative type photosensitive

A photosensitive, siloxane technology, used in optics, optomechanical equipment, photosensitive materials for optomechanical equipment, etc. Excellent film ratio and excellent electrical insulating properties

Active Publication Date: 2014-08-20
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when it is intended to cure a composition containing such an acid generator at a relatively low temperature, even if the curing temperature of the polysiloxane compound is low, there may remain undecomposed compounds below the decomposition temperature of the acid generator. possibility of things
Such residues have the danger of causing effects such as deterioration of light resistance, so the development of acid generators that can be used at lower temperatures is desired

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0184] Polysiloxane (Ia-1) and polysiloxane (Ib-1) were mixed at a mixing ratio (30% by weight): (70% by weight). Regarding this polysiloxane mixture, the dissolution rate relative to 2.38% TMAH aqueous solution after prebaking is / Second. This polysiloxane mixture was prepared so as to be a 35% PGMEA solution, and 1.0% by weight of the photoacid generator represented by the aforementioned formula (A-1) was added to the polysiloxane. Moreover, 0.3 weight% of KF-53 (trade name, Shin-Etsu Chemical Co., Ltd. make) was added as surfactant with respect to polysiloxane, and the negative photosensitive silicone composition was obtained.

[0185] This photosensitive siloxane composition was applied on a silicon wafer by spin coating, and after application, it was prebaked on a hot plate at 100° C. for 90 seconds, and adjusted so as to have a film thickness of 2 μm. After prebaking, use the g, h line exposure machine of FX-604 type Stepper (trade name, manufactured by Nikon Corporat...

Embodiment 2

[0189] Except that the mixing ratio of polysiloxane (Ia-1) and polysiloxane (Ib-1) was changed to (10% by weight): (90% by weight), it was obtained in the same manner as in Example 1. Negative photosensitive silicone composition. The dissolution rate of the polysiloxane mixture relative to the 2.38% TMAH aqueous solution after pre-baking is / Second.

[0190] Instead of using this composition, changing the exposure to 50mJ / cm 2 Other than that, pattern formation and baking hardening were performed similarly to Example 1. Observation of the obtained pattern revealed that the pattern of 5 µm was maintained. However, compared with Example 1, the pattern ridge line portion is rounded at a level that is practically no problem.

Embodiment 3

[0192] Except that the mixing ratio of polysiloxane (Ia-1) and polysiloxane (Ib-1) was changed to (60% by weight): (40% by weight), it was obtained in the same manner as in Example 1. Negative photosensitive silicone composition. The dissolution rate of the polysiloxane mixture relative to the 2.38% TMAH aqueous solution after pre-baking is / Second.

[0193] Using this composition, the development time was changed to 150 seconds, and the baking curing was changed to 350°C to obtain a pattern. As a result, a 5 μm pattern without residue was maintained.

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Abstract

The invention provides a negative type photosensitive siloxane composition, which is high in resolution, high in temperature resistance, and high in transparency. The negative type photosensitive siloxane composition can inhibit the heat collapse occurring in the heat consolidation without improving the molecular quantity of the high crosslinking agent or the siloxane composition. The negative type photosensitive siloxane composition comprises a (I) polysiloxane, aromatic imide compound released by light radiation and a solvent (III).

Description

technical field [0001] The present invention relates to a negative photosensitive silicone composition. Moreover, this invention also relates to the manufacturing method of the cured film using it, the cured film formed therefrom, and the element which has this cured film. Background technique [0002] In recent years, various proposals have been made for the purpose of improving light utilization efficiency and saving energy in optical elements such as displays, light-emitting diodes, and solar cells. For example, in terms of liquid crystal displays, it is known to form a transparent planarization film over a thin film transistor (hereinafter sometimes referred to as TFT) element, and form a pixel electrode on the planarization film, thereby increasing the opening of the display device. rate method (refer to Patent Document 1). In terms of organic electroluminescence elements (hereinafter, sometimes referred to as organic EL elements), a method has been proposed in which ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/075G03F7/004G03F7/00
CPCG03F7/004G03F7/0233G03F7/027G03F7/038G03F7/075G03F7/0757G03F7/085
Inventor 横山大志田代裕治野中敏章平原衣梨G·帕夫洛夫斯基
Owner MERCK PATENT GMBH
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