Method for improving film formation uniformity of wafer

Abstract

The invention discloses a method for improving the film formation uniformity of a wafer. The method comprises the steps that nitrogen gas is fed into a hot oxidizing furnace tube; a wafer holder is rotated; the wafer holder is lifted to a first position from the original position; the wafer holder keeps rotating, and a main oxidation process is conducted on the wafer; after the main oxidation process is completed, the wafer holder keeps rotating, and the wafer holder drops to the original position from a process stroke position. According to the method for improving the film formation uniformity of the wafer, the wafer holder keeps rotating at a low speed in the boat lifting process, the boat dropping process and the main oxidation process, as a result, the influence of nonuniform distribution of a temperature field and a gas flow field on the film formation uniformity of the wafer can be reduced, the film formation uniformity of the wafer in a semiconductor vertical furnace device is optimized, and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for improving the film-forming uniformity of process wafers in semiconductor vertical furnace equipment. Background technique [0002] At present, the electronic information industry with integrated circuits as the core has surpassed the traditional industries represented by automobiles, petroleum, and steel to become the largest industry, and has become a powerful engine and solid foundation for transforming and pulling traditional industries into the digital age. In terms of integrated circuit processing and manufacturing, the feature size continues to shrink, which makes the integration of chips higher and higher, causing a series of technical obstacles and process problems. Integrated circuit processing and manufacturing is a technology closely related to special equipment, commonly known as "one generation of equipment, one generation of tec...

AI Technical Summary

Problems solved by technology

During the process of raising or lowering the crystal boat, a small amount of oxygen (a small amount of oxygen) will be introduced into the oxidation furnace, which will form an uneven temperature field and air flow field in the oxidation furnace, and the rising or falling crystal boat will be affected. Influence, resulting in poor film uniformity

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