Preheating ring for epitaxial growth equipment, and epitaxial growth equipment

Abstract

The invention discloses a preheating ring for epitaxial growth equipment, and the epitaxial growth equipment. The preheating ring comprises an upper ring part and a lower ring part, wherein the upperring part and the lower ring part are coaxially superposed from top to bottom, the outer diameter of the upper ring part is equal to that of the lower ring part, the inner diameter of the upper ring part is smaller than that of the lower ring part, an exhaust channel is arranged on one side of the upper ring part so as to rapidly discharge purified gas and treated gas, and the inner diameter of the upper ring part is smaller than that of the lower ring part, so that the upper ring part shields the inner circumferential surface of the lower ring part, the purified gas is prevented from flowingupwards through a gap between a substrate supporting piece and the lower ring part, turbulent flow and extra flow resistance are prevented from being formed near the edge of a substrate, the deposition efficiency of the edge of the substrate is improved, and the film forming uniformity of the substrate is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing equipment, and more specifically relates to a preheating ring for epitaxial growth equipment and epitaxial growth equipment. Background technique [0002] The continued reduction in the size of semiconductor devices relies on more precise control of the flow and temperature of process gases delivered to semiconductor processing chambers. Typically, in a semiconductor cross-flow processing chamber, processing gases may be delivered to the reaction chamber and directed past the surface of the substrate to be processed, the temperature of which may be controlled by a preheating ring surrounding the substrate support. control. [0003] figure 1 A schematic diagram of a prior art preheating ring is shown, as figure 1 As shown, the preheating ring is a ring structure with a flat upper surface. [0004] figure 2 It shows a schematic diagram of the flow of the preheating ring in the reacti...

AI Technical Summary

Problems solved by technology

Although rotating the substrate 130 during deposition can produce rotationally symmetric deposition, the film uniformity is reduced due to poor deposition efficiency due to dilution, especially near the edge of the substrate 130

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