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Quantum dot luminescent device

A quantum dot luminescence and quantum dot technology, applied in the field of quantum dots, can solve the problems of low luminous efficiency, achieve the effects of ensuring electrical neutrality, improving working life, and improving external quantum efficiency

Active Publication Date: 2014-07-02
ZHEJIANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims to provide a quantum dot light-emitting device to solve the problem of low luminous efficiency of quantum dot light-emitting devices in the prior art

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] 1) Cleaning of glass substrates containing ITO transparent electrodes (i.e., anodes): cleaning with deionized water and ethanol and continuous ultrasonic treatment for 15 minutes, then quickly drying the liquid with a nitrogen gun, and treating it under oxygen plasma for 10 minutes, To clean the ITO surface and improve the work function of the ITO electrode;

[0069] 2) Fabrication of the hole transport layer: in air, spin-coat PEDOT:PSS on the cleaned glass substrate at a speed of 4000 rpm, and the spin-coating time is 1 minute. Anneal 20min, dry the liquid that has not evaporated, then transfer into the glove box (O 2 2 O<5ppm), annealed again at 130°C for 10min to form a PEDOT:PSS layer; then spin-coat poly-TPD chlorobenzene solution (concentration 8mg / ml) on the PEDOT:PSS layer at a speed of 2000 rpm, spin coating time 45s. After the spin coating is completed, anneal at 110°C for 30 minutes in a glove box to form a poly-TPD layer; then spin coat a PVK m-xylene solu...

Embodiment 2

[0075] 1), cleaning of glass substrates containing ITO transparent electrodes: same as in Example 1;

[0076] 2) Fabrication of the hole transport layer: in air, spin-coat PEDOT:PSS on the cleaned glass substrate at a speed of 4000 rpm, and the spin-coating time is 1 minute. Anneal 20min, dry the liquid that has not evaporated, then transfer into the glove box (O 2 2 O<5ppm), annealed again at 130°C for 10min to form a PEDOT:PSS layer; then spin-coated a poly-TPD chlorobenzene solution (concentration of 8mg / ml) on the PEDOT:SS layer at a speed of 2000 rpm, spin-coating time 45s, after the spin coating is completed, anneal at 110°C for 30 minutes in a glove box to form a poly-TPD layer;

[0077] 3), the production of quantum dot light-emitting layer: the same as Example 1;

[0078] 4) Fabrication of the electron blocking layer: same as in Example 1;

[0079] 5), the production of electron transport layer: same as embodiment 1;

[0080] 6), cathode: same as embodiment 1.

Embodiment 3

[0082] 1), cleaning of glass substrates containing ITO transparent electrodes: same as in Example 1;

[0083] 2) Fabrication of the hole transport layer: in air, spin-coat PEDOT:PSS on the cleaned glass substrate at a speed of 4000 rpm, and the spin-coating time is 1 minute. Anneal 20min, dry the liquid that has not evaporated, then transfer into the glove box (O 2 2 O<5ppm), then annealed at 130°C for 10min to form a PEDOT:PSS layer;

[0084] 3), the production of quantum dot light-emitting layer: the same as Example 1;

[0085] 4) Fabrication of the electron blocking layer: same as in Example 1;

[0086] 5), the production of electron transport layer: same as embodiment 1;

[0087] 6), cathode: same as embodiment 1.

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Abstract

The invention provides a quantum dot luminescent device. The quantum dot luminescent device comprises an anode, a hole transport layer, a quantum dot luminescent layer, an electronic transfer layer and a cathode which are arranged sequentially and adjacently. The quantum dot luminescent device further comprises an electronic barrier layer. The electronic barrier layer is arranged in the electronic transfer layer or between the quantum dot luminescent layer and the electronic transfer layer. Due to the arrangement of the electronic barrier layer, balance injection of charge carriers is ensured, automatic charge transfer between the electronic transfer layer and the quantum dot luminescent layer is isolated, electric neutrality of a quantum dot is ensured, then the quantum dot luminescent device can keep deserved luminous efficiency, the external quantum efficiency of the quantum dot luminescent device is improved, and meanwhile the service life of the quantum dot luminescent device is largely prolonged.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a quantum dot light-emitting device. Background technique [0002] Lighting and display are important needs of human society, and their energy consumption is a large part of the energy consumption of today's society. In the earliest period, incandescent lamps were used for lighting, and the energy utilization rate was less than 10%; even if the fluorescent lighting was improved later, the energy utilization rate was only 20-30%; the current light-emitting diode (LED) has high brightness and low energy consumption. With the advantages of less heat and long life, it will undoubtedly become a new generation of lighting sources. [0003] The semiconductor quantum well structure LED that has been commercialized at present has high brightness and high efficiency, but its energy consumption input ratio is also high. LEDs of this kind of structure are generally grown by epitaxial ...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/14H01L51/50
CPCH10K50/18
Inventor 彭笑刚金一政戴兴良张振星赵飞
Owner ZHEJIANG UNIV
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