Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quantum dot light emitting device

A quantum dot luminescence and quantum dot technology, applied in the field of quantum dots, can solve the problems of low luminous efficiency, achieve the effects of ensuring electrical neutrality, improving external quantum efficiency, and preventing spontaneous transfer

Active Publication Date: 2016-08-17
ZHEJIANG UNIV +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims to provide a quantum dot light-emitting device to solve the problem of low luminous efficiency of quantum dot light-emitting devices in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot light emitting device
  • Quantum dot light emitting device
  • Quantum dot light emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] 1) Cleaning of glass substrates containing ITO transparent electrodes (i.e., anodes): cleaning with deionized water and ethanol and continuous ultrasonic treatment for 15 minutes, then quickly drying the liquid with a nitrogen gun, and treating it under oxygen plasma for 10 minutes, To clean the ITO surface and improve the work function of the ITO electrode;

[0069] 2) Fabrication of the hole transport layer: in air, spin-coat PEDOT:PSS on the cleaned glass substrate at a speed of 4000 rpm, and the spin-coating time is 1 minute. Anneal 20min, dry the liquid that has not evaporated, then transfer into the glove box (O 2 2 O<5ppm), annealed again at 130°C for 10min to form a PEDOT:PSS layer; then spin-coat poly-TPD chlorobenzene solution (concentration 8mg / ml) on the PEDOT:PSS layer at a speed of 2000 rpm, spin coating time 45s. After the spin coating is completed, anneal at 110°C for 30 minutes in a glove box to form a poly-TPD layer; then spin coat a PVK m-xylene solu...

Embodiment 2

[0075] 1), cleaning of glass substrates containing ITO transparent electrodes: same as in Example 1;

[0076] 2) Fabrication of the hole transport layer: in air, spin-coat PEDOT:PSS on the cleaned glass substrate at a speed of 4000 rpm, and the spin-coating time is 1 minute. Anneal 20min, dry the liquid that has not evaporated, then transfer into the glove box (O 2 2 O<5ppm), annealed again at 130°C for 10min to form a PEDOT:PSS layer; then spin-coated a poly-TPD chlorobenzene solution (concentration of 8mg / ml) on the PEDOT:SS layer at a speed of 2000 rpm, spin-coating time 45s, after the spin coating is completed, anneal at 110°C for 30 minutes in a glove box to form a poly-TPD layer;

[0077] 3), the production of quantum dot light-emitting layer: the same as Example 1;

[0078] 4) Fabrication of the electron blocking layer: same as in Example 1;

[0079] 5), the production of electron transport layer: same as embodiment 1;

[0080] 6), cathode: same as embodiment 1.

Embodiment 3

[0082] 1), cleaning of glass substrates containing ITO transparent electrodes: same as in Example 1;

[0083] 2) Fabrication of the hole transport layer: in air, spin-coat PEDOT:PSS on the cleaned glass substrate at a speed of 4000 rpm, and the spin-coating time is 1 minute. Anneal 20min, dry the liquid that has not evaporated, then transfer into the glove box (O 2 2 O<5ppm), then annealed at 130°C for 10min to form a PEDOT:PSS layer;

[0084] 3), the production of quantum dot light-emitting layer: the same as Example 1;

[0085] 4) Fabrication of the electron blocking layer: same as in Example 1;

[0086] 5), the production of electron transport layer: same as embodiment 1;

[0087] 6), cathode: same as embodiment 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a quantum dot light-emitting device. The quantum dot light-emitting device includes an anode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode arranged adjacently in sequence. The quantum dot light-emitting device also includes an electron blocking layer, which is arranged in the electron transport layer or on the between the light-emitting layer and the electron-transporting layer. The electronic blocking layer is used to ensure the balanced injection of carriers on the one hand, and on the other hand to isolate the spontaneous transfer of charges between the electron transport layer and the quantum dot light-emitting layer, which ensures the electrical neutrality of the quantum dots, and then keeps the quantum dot light-emitting devices working. Excellent luminous efficiency improves the external quantum efficiency of the quantum dot light-emitting device and greatly improves the working life of the quantum dot light-emitting device.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a quantum dot light-emitting device. Background technique [0002] Lighting and display are important needs of human society, and their energy consumption is a large part of the energy consumption of today's society. In the earliest period, incandescent lamps were used for lighting, and the energy utilization rate was less than 10%; even if the fluorescent lighting was improved later, the energy utilization rate was only 20-30%; the current light-emitting diode (LED) has high brightness and low energy consumption. With the advantages of less heat and long life, it will undoubtedly become a new generation of lighting sources. [0003] The semiconductor quantum well structure LED that has been commercialized at present has high brightness and high efficiency, but its energy consumption input ratio is also high. LEDs of this kind of structure are generally grown by epitaxial ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/14H01L51/50
CPCH10K50/18
Inventor 彭笑刚金一政戴兴良张振星赵飞
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com