Thin film transistor and manufacturing method thereof, array substrate and display device

Abstract

The invention provides a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a substrate, a gate electrode, an active layer, a source drain electrode, a pixel electrode and one or more insulation layers, wherein at least one insulation layer comprises a bottom insulation layer and an upper insulation layer, and the content of the hydrogen in the upper insulation layer is higher than the content of the hydrogen in the bottom insulation layer. The thin film transistor is produced by the double-layer etching barrier layer process, the content of the hydrogen in a silicon oxide thin film in an etching barrier layer is effectively reduced, the hydrogen ion generated by silicane decomposition is prevented from reacting with the metal oxide in the active layer, thus the oxide thin film transistor keeps better characteristics, and the thin film deposition rate of the etching barrier layer is increased.

Description

technical field [0001] The invention relates to liquid crystal display technology, in particular to thin film transistor (TFT, Thin Film Transistor) technology in the liquid crystal display technology. Background technique [0002] figure 1 Shows the structure of oxide thin film transistors in the prior art, such as figure 1 As shown, the oxide thin film transistor in the prior art sequentially includes a substrate 10, a gate electrode 11, a gate insulating layer 12, an active layer 13, an etching stopper layer 14, a source-drain electrode 15, a protective layer 16 and a pixel electrode from bottom to top. 17. figure 2 Shows the manufacturing method of the oxide thin film transistor in the prior art, such as figure 2 As shown, in the existing manufacturing method, firstly, the gate electrode 11 is formed on the substrate 10 (such as figure 2 shown in 1a), and then form a gate insulating layer 12 to cover the substrate 10 and the gate electrode 11 (such as figure 2 s...

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Problems solved by technology

The purpose of the etching barrier layer process is to avoid the corrosion of the metal by the etchant during the etching process of the source and drain electrodes on the one hand; on the other hand, the etching barrier layer process usually uses silicon oxide materials to ensure that the silicon oxide film To maintain a low hydrogen content, the plasma-enhanced chemical vapor deposition method (PECVD) is usually used to deposit silicon oxide films. For example, the reactions of In, Zn, and O in IGZO will affect the characteristics of IGZO films. For this, the current method usually used is to reduce the deposition temperature to about 200°C, but the unfavorable factor brought by this method is that when the reaction gas flow rate is constant , so that the hydrogen content in the silicon oxide film formed by deposition increases, the stability of the film becomes poor, and the deposition rate of the film is also reduced.

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