Solar cell with three gate electrode structures
A solar cell and grid electrode technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of large slurry consumption and inferior electrical performance as triple grid batteries, etc., to reduce unit consumption, reduce grid shading area, The effect of reducing power loss
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Embodiment 1
[0022] For a 156X156 monocrystalline silicon cell, there are 3 main grid lines and 80 auxiliary grid lines, the distance between adjacent main grid lines is 52mm, the width b of the main grid lines is 1.5mm, and the two The length of the tapered portion c at the end is 8mm, and the length of the tapered end a is 0.8mm. At the junction of the main grid and the sub-gate, the width e of the widest part of the sub-gate is 75 μm, the width d of the narrowest part is 45 μm, the length of the gradient f is 7 mm, the two ends of the sub-gate are not connected, and the distance between two adjacent sub-gates is 1.94mm. The distance from the end of the grid line to the side is 1.2mm.
[0023] The three main grid lines on the back have a width of 3mm and a spacing of 52mm, with a triangle direction mark, a width of 1mm, a length of 2mm, and a distance of 1.8mm to the side. The distance from the back field to the edge of the wafer is 1mm.
Embodiment 2
[0025] For a 156X156 monocrystalline silicon cell, there are 3 main grid lines, 80 auxiliary grid lines, the distance between adjacent main grid lines is 52mm, the width b of the main grid lines is 1.5mm, and the two ends of the main grid lines The length of the gradual part c is 8 mm, and the length of the gradual end a is 0.8 mm. At the junction of the main grid and the sub-gate, the width e of the widest part of the sub-gate is 90 μm, the width d of the narrowest part is 60 μm, the length of the gradient f is 7 mm, the two ends of the sub-gate are not connected, and the distance between two adjacent sub-gates is 1.94mm. The distance from the end of the grid line to the side is 1.2mm.
[0026] The width of the three main grid lines on the back is 3mm, the spacing is 52mm, there is a triangle direction mark, the width is 1mm, the length is 2mm, and the distance to the side is 1.8mm. The distance from the back field to the edge of the wafer is 1mm.
Embodiment 3
[0028] For a 156X156 monocrystalline silicon cell, there are 3 main grid lines and 78 auxiliary grid lines, the distance between adjacent main grid lines is 52mm, the width b of the main grid lines is 1.5mm, and the The length of the tapered portion c at the end is 8mm, and the length of the tapered end a is 0.8mm. At the junction of the main grid and the sub-gate, the width e of the widest part of the sub-gate is 120 μm, the width d of the narrowest part is 90 μm, the length of the gradient f is 7 mm, the two ends of the sub-gate are not connected, and the distance between two adjacent sub-gates is 1.99mm. The distance from the end of the grid line to the side is 1.2 mm.
[0029] The width of the three main grid lines on the back is 3mm, the spacing is 52mm, there is a triangle direction mark, the width is 1mm, the length is 2mm, and the distance to the side is 1.8mm. The distance from the back field to the edge of the wafer is 1mm.
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