Cobalt doping amorphous carbon film / GaAs / Ag photoresistor and preparing method thereof

An amorphous carbon film and photoresistor technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of unsuitable light detection components, slow response speed, and high production costs, and achieve linear illumination characteristics and fast light response speed. , the effect of low price

Active Publication Date: 2014-05-14
HUAIYIN TEACHERS COLLEGE
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Problems solved by technology

Their advantages are small size, high sensitivity, and good spectral characteristics. The disadvantages are that they are greatly affected by temperature, the response speed is not fast, and the illumination characteristics are nonlinear, so they are not suitable for light detection elements; Heavy metal cadmium, easy to cause pollution to the environment and other defects

Method used

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  • Cobalt doping amorphous carbon film / GaAs / Ag photoresistor and preparing method thereof
  • Cobalt doping amorphous carbon film / GaAs / Ag photoresistor and preparing method thereof
  • Cobalt doping amorphous carbon film / GaAs / Ag photoresistor and preparing method thereof

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Embodiment Construction

[0023] Prototypes were made according to the above-mentioned technical scheme. Take an n-type GaAs substrate doped with silicon (Si), and the resistivity of the substrate is 10 -2 Ω.cm, on an electrode area of ​​the substrate, a metal Co-doped a-C film was prepared by pulsed laser deposition. Graphite with a purity of 99.99% and metal Co with a purity of 99.9% were used as the target source during coating. On the graphite target, uniform doping is achieved by the rotation of the target and the sample substrate during operation, the Co doping amount is about 10 at%, the laser energy is 390 mJ / pulse, and the vacuum degree of the cavity is 1×10 -4 mBar, the substrate temperature is 480°C, and the distance between the target and the substrate is 5cm. After coating, anneal for 30 minutes, and cool down to room temperature naturally, and the thickness of a-C film is about 40nm. Then adopt the vacuum thermal evaporation method, through the control of the mask plate, vapor-deposit ...

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Abstract

The invention provides a cobalt doping amorphous carbon film / GaAs / Ag photoresistor and a preparing method thereof. According to the method, silicon doping n-type GaAs substrates serve as a bottom layer, the bottom layer is provided with two electrode regions in advance, a Co doping a-C film is prepared on the substrate of one electrode region, an Ag layer is evaporated on the Co doping a-C film in a vacuum heat evaporation method, an Ag layer is directly evaporated on the substrate of the other electrode region on the bottom layer, and accordingly the photoresistor of a double-unction series-connection structure and with a p-n junction and a schottky junction is formed. The photoresistor is high in red light sensitivity and light sensitivity and high in light response speed, has linear illumination characteristics, can be used as an optoelectronic switch for fire alarms or a light power meter, and also has the advantages of being low in price of raw materials, simple in preparing process, environmentally friendly, free of pollution and the like.

Description

technical field [0001] The invention relates to photoresistor technology, in particular to a cobalt-doped amorphous carbon film / GaAs / Ag photoresistor device and a preparation method thereof. technical background [0002] The photoresistor device is a special resistor made of semiconductor photoconductive effect. It is very sensitive to light. Its resistance value can change with the intensity of external light (light and dark). Increase and show a high resistance state; the resistance value will decrease rapidly when the light is irradiated. In view of this characteristic, photoresistors are widely used in national defense, scientific research, industrial and agricultural production, automatic control of various circuits in household appliances, or involving various measuring instruments such as light measurement, light control, and photoelectric conversion. At present, the manufacture of photoresistor devices mostly uses materials such as metal sulfide, selenide and te...

Claims

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Application Information

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IPC IPC(8): H01L31/0264H01L31/10H01L31/20
CPCH01L31/0336H01L31/11H01L31/20Y02P70/50
Inventor 翟章印俞阿龙张佳
Owner HUAIYIN TEACHERS COLLEGE
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