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Preparing method of ring-shaped Kraft microelectrode based on self-stress bending

A self-stressing, micro-electrode technology, applied in the field of medical devices, can solve the problems of unreported annular bending, unused material internal stress properties, complex structure, etc.

Active Publication Date: 2014-04-23
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method is mainly closed by mechanical methods, and the structure is relatively complicated, and the internal stress properties of the material are not used.
[0006] In summary, although the ring-shaped Kraft electrode and its preparation method have been studied to a certain extent, there is no report in the literature on the method of using the stress of the electrode material itself to achieve ring-shaped bending. Therefore, the present invention provides an ultra-thin curved electrode. The ring-shaped kraft microelectrode preparation method solves this problem

Method used

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  • Preparing method of ring-shaped Kraft microelectrode based on self-stress bending
  • Preparing method of ring-shaped Kraft microelectrode based on self-stress bending
  • Preparing method of ring-shaped Kraft microelectrode based on self-stress bending

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Embodiment 1

[0038] This embodiment provides a method for preparing a flexible microelectrode based on Parylene-C, and during the preparation process, the thickness of the Parylene-C layer and the heat treatment conditions are controlled to realize ring-shaped bending based on self-stress to form a kraft electrode. The specific preparation process of the microelectrode is as follows:

[0039] First, deposit 10 μm Parylene-C (first layer) on the Si wafer, heat treatment at 200 degrees Celsius for 48 hours in vacuum or nitrogen atmosphere;

[0040] Secondly, throw 5 μm of positive glue on the heat-treated sheet and follow the figure 1 The microelectrode conductive structure layout shown is patterned, sputtering titanium or chromium seed layer, 100-500 angstroms, and then sputtering metal iridium, platinum or gold 100-500 nanometers, using Lift-off process to remove photoresist, graphics The chemical seed layer and the metal layer constitute the conductive structure of the electrode;

[004...

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Abstract

The invention provides a preparing method of a ring-shaped Kraft microelectrode based on self-stress bending. According to the method, in the preparing process, the ring-shaped bending based on the self stress is realized through controlling the thickness of Parylene-C layers and the heat treatment conditions and regulating the self-stress conditions of different Parylene-C layers, and a Kraft electrode is formed. The preparing method has the advantages that the operation is simple and convenient, and a series of annular Kraft electrodes in different diameters can be formed.

Description

technical field [0001] The invention relates to a method for preparing a microelectrode in the technical field of medical devices, in particular to a method for preparing a ring-shaped kraft microelectrode based on self-stress bending. Background technique [0002] In recent years, with the continuous advancement of MEMS (Micro-Electro-Mechanical Systems) technology, the application range of micro-systems such as micro-electronic devices and micro-sensors has continued to expand, and has been widely used in many fields, especially in the medical field. . [0003] Ring-shaped kraft electrodes have been used in the medical field to a certain extent, but most of them are complicated to prepare and require additional materials to provide stress to form a ring structure, which will also increase the thickness. The possible method of using the properties of the electrode material itself to generate bending stress has not received much attention. [0004] US Patent Publication No...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): A61N1/05A61B5/04
Inventor 刘景全康晓洋田鸿昌杨春生
Owner SHANGHAI JIAO TONG UNIV
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