Compound semiconductor device and method of manufacturing the same

A semiconductor and compound technology, applied in the field of compound semiconductor devices and their manufacturing, can solve problems such as failure to obtain breakdown voltage

Inactive Publication Date: 2014-04-02
TRANSPHORM JAPAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to reduce the current collapse phenomenon, a passivation film made of a material containing Al such as AlN is effective, but there is a problem that a sufficient withstand breakdown voltage cannot be obtained

Method used

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  • Compound semiconductor device and method of manufacturing the same
  • Compound semiconductor device and method of manufacturing the same
  • Compound semiconductor device and method of manufacturing the same

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Experimental program
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no. 1 approach ）

[0029] In the present embodiment, an AlGaN / GaN·HEMT of a nitride semiconductor is disclosed as a compound semiconductor device. Here, as an example, a so-called MIS-type AlGaN / GaN·HEMT in which a gate electrode is provided on a semiconductor through a gate insulating film is shown.

[0030] Figure 2A to Figure 2C with Figure 3A to Figure 3C is a schematic cross-sectional view showing a method of manufacturing the AlGaN / GaN·HEMT according to the first embodiment in process order.

[0031] First, if Figure 2A As shown, a compound semiconductor stack structure 2 is formed on a semi-insulating SiC substrate 1 as a growth substrate, for example. As the growth substrate, a Si substrate, a sapphire substrate, a GaAs substrate, a GaN substrate, or the like may be used instead of the SiC substrate. Furthermore, the conductivity of the substrate can be semi-insulating or conductive.

[0032] The compound semiconductor stack structure 2 includes: a buffer layer 2a, an electron tr...

Embodiment ）

[0062] Hereinafter, modified examples of the first embodiment will be explained. In this example, as in the first embodiment, the structure of the AlGaN / GaN·HEMT and its manufacturing method are disclosed, however, a so-called Schottky contact in which the gate electrode makes Schottky contact with the semiconductor is shown. type AlGaN / GaN·HEMT as an example. Note that the same constituent members and the like as those of the first embodiment will be denoted by the same reference numerals, and thus detailed description thereof will be omitted.

[0063] Figure 5A to Figure 5C as well as Figure 6A with Figure 6B is a schematic cross-sectional view showing the main process of the method of manufacturing the AlGaN / GaN·HEMT according to the modified example of the first embodiment.

[0064] First, similar to the first embodiment's Figure 2A with Figure 2B , forming a compound semiconductor stack structure 2 on the SiC substrate 1 . The compound semiconductor stack stru...

no. 2 approach ）

[0085] The embodiment discloses the MIS-type AlGaN / GaN·HEMT and its manufacturing method as in the first embodiment, but the embodiment differs from the first embodiment in that the formation state of the passivation film is slightly different. Note that the same constituent members and the like as those of the first embodiment will be denoted by the same reference numerals, and thus detailed description thereof will be omitted.

[0086] Figure 7A to Figure 7C to Figure 9A with Figure 9B is a schematic cross-sectional view showing a method of manufacturing the AlGaN / GaN HEMT according to the second embodiment in process order.

[0087] First, if Figure 7A As shown, a compound semiconductor stack structure 2 is formed on a semi-insulating SiC substrate 1 as a growth substrate, for example. The compound semiconductor stack structure 2 includes a buffer layer 2a, an electron transit layer 2b, an intermediate layer 2c, and an electron supply layer 2d. The method of growin...

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Abstract

The present invention provides a compound semiconductor device and a method of manufacturing the same. The compound semiconductor device includes: a compound semiconductor stacked structure; a source electrode and a drain electrode formed separately from each other above the compound semiconductor stacked structure; a gate electrode formed between the source electrode and the drain electrode above the compound semiconductor stacked structure; and a passivation film formed above the compound semiconductor stacked structure and made of an insulating material containing Al, in which the passivation film is in a non-contact state with the compound semiconductor stacked structure under the source electrode and the drain electrode.

Description

technical field [0001] Embodiments discussed herein relate to compound semiconductor devices and methods of manufacturing the same. Background technique [0002] Application of nitride semiconductors to high withstand voltage, high output power semiconductor devices is being considered in a manner utilizing characteristics such as high saturation electron velocity and wide bandgap. For example, GaN, which is a nitride semiconductor, has a bandgap of 3.4eV, which is larger than that of Si (1.1eV) and GaAs (1.4eV), and thus GaN has a high breakdown electric field strength. . Therefore, GaN is highly expected to be used as a material of a semiconductor device for a power supply that obtains high-voltage operation and high output power. [0003] As semiconductor devices using nitride semiconductors, a large number of field effect transistors (specifically, high electron mobility transistors (HEMTs)) have been reported. For example, among GaN-based HEMTs (GaN-HEMTs), AlGaN / GaN...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L21/335H02M5/458H03F3/189
CPCH01L29/778H01L29/7787H01L21/28H01L29/2003H01L29/66462H01L29/42316
Inventor 多木俊裕佐藤勇一
Owner TRANSPHORM JAPAN
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