Preparation method of thin film transistor, thin film transistor and display panel

Abstract

The embodiment of the invention provides a preparation method of a thin film transistor, the thin film transistor and a display panel, and belongs to the field of liquid crystal display, which aims at improving the mobility of carriers in polycrystalline silicone. The preparation method of the thin film transistor comprises the following steps of M1, depositing an induction layer on a substrate; M2, etching a concave part in the induction layer through the etching process, wherein the edge of the concave part is in a specifical shape; M3, depositing a non-crystalline silicone layer in the specifically-shaped concave part, inducing the non-crystalline silicone layer to form a polycrystalline silicone layer through a crystallizing method, arranging the polycrystalline silicone particles in the polycrystalline silicone in the direction vertical to the edge of the concave part by the limitation of the edge of the concave part, and enabling the polycrystalline silicone layer and the induction layer to form a semiconductor layer; M4, respectively depositing a grid insulation layer, a grid, a passivating layer, a source and a drain on the semiconductor layer, wherein the source and the drain are connected with the semiconductor layer. The method can be used for manufacturing the thin film transistor.

Description

technical field [0001] The invention relates to the field of liquid crystal display, in particular to a preparation method of a thin film transistor, a thin film transistor and a display panel. Background technique [0002] In recent years, with the continuous development of polysilicon TFT (Thin Film Transistor, thin film transistor) technology, its application has become more and more extensive, and it is regarded as an ideal substitute for amorphous silicon thin film transistor. Compared with amorphous silicon thin film transistors, polycrystalline silicon thin film transistors have the characteristics of high mobility, high integration and high resolution, and can provide brighter and more detailed images. [0003] In the prior art, thin film transistors are mostly prepared by the following methods, such as figure 1 As shown, step S1: forming a first passivation layer on the substrate; step S2: depositing an amorphous silicon layer on the first passivation layer, and in...

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Problems solved by technology

[0004] Most of the polysilicon thin film transistors prepared by the above method are formed by inducing amorphous silicon by crystallization method. In the process of inducing amorphous silicon to form polysilicon, amorphous silicon spontaneously and slowly crystallizes along the direction of energy induction to form crystals. Grains, the grains formed in this spontaneous state, due to the low degree of crystallization, the size of the formed grains is small and the morphological distribution is out of order, so that when the grains are integrated to form polysilicon, the mobility of carriers in the polysilicon not tall

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