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Method for manufacturing MWT photovoltaic cell with passivated back

A manufacturing method and photovoltaic cell technology, applied in photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., to achieve low transformation costs and high efficiency

Inactive Publication Date: 2014-03-05
ALTUSVIA ENERGY TAICANG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, many companies and research institutes at home and abroad are developing point-contact solar cells and MWT cells on the back of monocrystalline silicon, and there are also cells combining the two, but there has never been a low-cost mass-produced solar cell preparation method that combines the two

Method used

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  • Method for manufacturing MWT photovoltaic cell with passivated back

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment 1: Both MWT technology and back passivation technology are two means to improve the efficiency of photovoltaic cells. In this embodiment, the two are combined to obtain a photovoltaic cell with higher conversion efficiency. First, a P-type silicon wafer 3 with a resistivity of 2 ohm·cm is selected, and the oxide and metal impurities on the surface of the silicon wafer are removed by cleaning, and at the same time, the mechanical damage layer on the surface of the silicon wafer is also removed. The surface of the cleaned silicon wafer is textured to form an undulating texture that reflects the incident light multiple times and increases the absorption of sunlight by the silicon wafer. The textured silicon wafer is placed in a diffusion tube for phosphorus diffusion to form an N-type diffusion layer 2 with a sheet resistance of 75 ohm / sq. During the diffusion process, phosphosilicate glass will be formed on the surface of the silicon wafer. After removing only ...

Embodiment 2

[0029] Embodiment 2: In this embodiment, a P-type silicon wafer 3 with a resistivity of 0.5 ohm·cm is selected for cleaning to remove oxides and metal impurities on the surface of the silicon wafer, and at the same time remove the mechanically damaged layer on the surface of the silicon wafer. The surface of the cleaned silicon wafer is textured to form an undulating texture that reflects the incident light multiple times and increases the absorption of sunlight by the silicon wafer. The textured silicon wafer is put into a diffusion tube for phosphorus diffusion to form an N-type diffusion layer 2 with a sheet resistance of 30 ohm / sq. During the diffusion process, phosphosilicate glass will be formed on the surface of the silicon wafer. After removing the phosphosilicate glass on the surface of the silicon wafer, the polishing machine will perform single-sided polishing on the back under the protection of water film or weather isolation acid mist.

[0030] A layer of aluminum...

Embodiment 3

[0033] Embodiment 3: In this embodiment, a P-type silicon wafer 3 with a resistivity of 6 ohm·cm is selected, and the oxide and metal impurities on the surface of the silicon wafer are cleaned to remove the mechanical damage layer on the surface of the silicon wafer. The surface of the cleaned silicon wafer is textured to form an undulating texture that reflects the incident light multiple times and increases the absorption of sunlight by the silicon wafer. The textured silicon wafer is put into a diffusion tube for phosphorus diffusion to form an N-type diffusion layer 2 with a sheet resistance of 120 ohm / sq.

[0034] A layer of aluminum oxide layer 4 with a thickness of 100 nm was deposited on the polished backside of the silicon wafer by plasma enhanced chemical vapor deposition (PECVD) as a backside passivation layer. A through hole in the form of 4×4 is drilled on the silicon wafer with a red laser, the diameter of the through hole is 1000um, and the hole pitch is 100mm. ...

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Abstract

The invention discloses a method for manufacturing an MWT photovoltaic cell with the passivated back. Integrating MWT and back passivation technologies, the manufacturing process is suitable for existing photovoltaic cell production lines. The photovoltaic cell is low in improvement cost and more efficient, and the technology for manufacturing the photovoltaic cell is more complex.

Description

technical field [0001] The invention relates to a method for manufacturing a back passivated MWT photovoltaic cell, belonging to the field of photovoltaic cells. Background technique [0002] The industrial production of modern solar cells is developing towards high efficiency and low cost. The combination of MWT (Metal wrap through) technology and rear passivation (PERC) technology is a representative of the development direction of high efficiency and low cost. Its advantages lie in: [0003] (1) Very low front shading: MWT technology leads the busbar to the back of the battery by drilling holes in the silicon wafer, thereby reducing the shading of the metal electrodes on the sun-facing side of the battery. [0004] (2) Excellent back reflector: Due to the existence of the dielectric film on the back of the battery, the internal back reflection increases from 65% of the conventional all-aluminum back field to 92-95%. On the one hand, it increases the absorption of long-wa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/02167Y02E10/50Y02P70/50
Inventor 夏正月高艳涛陈同银刘仁中董经兵张斌邢国强
Owner ALTUSVIA ENERGY TAICANG
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