A t-shaped interleaved double-gate slow-wave device
A device and slow-wave technology, applied in the field of vacuum electronics, can solve the problems of injection-wave interaction efficiency, low output power, poor device output power and gain, poor dispersion characteristics, etc., to enhance the local characteristics of the electric field and increase the output Power and efficiency, and the effect of high coupling impedance
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[0014] This implementation mode takes a T-shaped interleaved double-gate slow-wave device with an operating frequency range of 138-155 GHz as an example.
[0015] Set the specific dimensions as follows: the end face (cross-section) width×height of the T-shaped staggered double-gate slow-wave device is 1.21mm×1.07mm, the period is 0.75mm, the height of the electron injection channel is 0.21mm, and the height of the T-shaped grid is 0.43mm, the height of the grid cap is 0.05mm, the thickness of the rectangular body is 0.17mm, and the thickness of the grid cap is 0.20mm; the width of the grid cap of the rectangular interlaced double-gate slow-wave device is 0.17mm, and other parameters are the same as those of the T-shaped The staggered double gates are consistent; two kinds of staggered double gate slow-wave devices are obtained, and then the above slow-wave devices are simulated by using 3D electromagnetic simulation software, and the dispersion curve is obtained as image 3 , ...
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