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Preparation method for silicon-germanium heterojunction bipolar transistor (SiGe HBT)

A technology of heterojunction bipolar and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as external expansion and SiGeHBT performance deterioration, achieve good device performance, avoid re-diffusion, prevent Effects of Heterojunction Barrier Effects

Active Publication Date: 2014-02-19
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the boron atoms in the P-type base region will expand during the later thermal annealing process, and the redistribution of boron will lead to the heterojunction barrier effect of the heterojunction, which will lead to a sharp deterioration in the performance of SiGe HBT

Method used

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  • Preparation method for silicon-germanium heterojunction bipolar transistor (SiGe HBT)
  • Preparation method for silicon-germanium heterojunction bipolar transistor (SiGe HBT)
  • Preparation method for silicon-germanium heterojunction bipolar transistor (SiGe HBT)

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Embodiment 1

[0031] A method for manufacturing a germanium-silicon heterojunction bipolar transistor of the present invention comprises the following steps:

[0032] Step S01 , forming an N+ buried layer region in the silicon substrate, and forming an N− collector region on the N+ buried layer region.

[0033] see figure 1 with figure 2 Specifically, forming the N+ buried layer region 3 in the silicon substrate 1 includes: depositing a layer of first SiO on the silicon substrate 1 2 Layer 2: Etching the above-mentioned first SiO by dry etching and / or wet etching 2 layer 2 until the upper surface of the silicon substrate 1, in the first SiO 2 Form the window of N+ buried layer region 3 in layer 2; then ion-implant N-type impurities and anneal in a high-temperature furnace to obtain N+ buried layer region 3 located in silicon substrate 1, wherein the above-mentioned N-type impurities are phosphorus, arsenic or antimony . In this embodiment, the aforementioned silicon substrate 1 is a ...

Embodiment 2

[0051] A method for manufacturing a germanium-silicon heterojunction bipolar transistor of the present invention comprises the following steps:

[0052] Step S01 , forming an N+ buried layer region in the silicon substrate, and forming an N− collector region on the N+ buried layer region.

[0053] see figure 1 with figure 2 Specifically, forming the N+ buried layer region 3 in the silicon substrate 1 includes: depositing a layer of first SiO on the silicon substrate 1 2 Layer 2: Etching the above-mentioned first SiO by dry etching and / or wet etching 2 layer 2 until the upper surface of the silicon substrate 1, in the first SiO 2 Form the window of N+ buried layer region 3 in layer 2; then ion-implant N-type impurities and anneal in a high-temperature furnace to obtain N+ buried layer region 3 located in silicon substrate 1, wherein the above-mentioned N-type impurities are phosphorus or arsenic or antimony . In this embodiment, the aforementioned silicon substrate 1 is ...

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Abstract

The invention provides a preparation method for a SiGe HBT. N type impurities are implanted in ions into a second polysilicon layer, and then annealing with laser in a proper wavelength, instead of normal rapid thermal annealing, is used to activate the N type impurities; and thus, energy of the laser in the proper wavelength only has effect within the thickness range of the second polysilicon layer, and does not influence a SiGe base region under the second polysilicon layer. Therefore, on the premise that the N type impurities which are implanted in ions into the second polysilicon layer are effectively activated, boron in the SiGe base region is avoided form further spreading, further barrier effect of heterojunction is prevented, and the SiGe HBT has better performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor device preparation, in particular to a method for manufacturing a germanium-silicon heterojunction bipolar transistor. Background technique [0002] In recent years, due to the performance of silicon-germanium heterojunction transistors with energy band engineering characteristics is significantly better than that of bipolar transistors, silicon-germanium heterojunction transistors have been developed rapidly. The energy band structure of the NPN-type germanium-silicon heterojunction bipolar transistor (SiGe Heterojunction Bipolar Transistor, referred to as SiGe HBT) inhibits the injection of holes in the base region to the emitter region, and is conducive to the injection of electrons in the emitter region into the base region , so the injection efficiency of the emitter region is improved, so that the current gain is mainly determined by the energy band instead of only by the impurity conc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/737H01L29/06H01L21/331H01L21/265
CPCH01L21/268H01L29/66242
Inventor 周伟张伟严利人刘志弘付军周卫王全
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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