Semiconductor device and making method thereof

Abstract

A semiconductor device is disclosed, and comprises a substrate, a gate stack structure on the substrate, source / drain regions in the substrate at two sides of the gate stack structure, and a channel region between the source / drain regions in the substrate. The source region in the source / drain region comprises a GeSn alloy, and a tunneling dielectric layer optionally exists between the GeSn alloy of the source region and the channel region. By using the semiconductor device and a manufacturing method thereof in the present invention, selective epitaxy is performed, or a precursor is injected and then rapid annealing is performed through laser, to form a GeSn alloy with a narrow band gap, thereby effectively increasing an on-state current of a TFET, and having an important application prospect in a high-performance low-consumption application.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, more specifically, to a tunneling field effect transistor (TFET) with a GeSn alloy as a source and a manufacturing method thereof. Background technique [0002] With the continuous development of integrated circuit technology, especially the continuous proportional reduction of device size, various key parameters of the device, such as threshold voltage, have also been reduced. The advantages of reduced power consumption and improved integration have promoted the overall performance of the device. However, at the same time, the driving capability of the device is limited by the traditional silicon material process, the carrier mobility is low, and the driving capability of the device is relatively insufficient. Therefore, high-mobility channel devices have an important application background in the future. [0003] Existing high-mobility channel devices are usually m...

AI Technical Summary

Problems solved by technology

However, when the size continues to shrink below 22nm, the driving current of the existing ordinary TFET is 3 to 4 orders of magnitude lower than that of the conventional MOSFET, which makes it impossible to take into account the reduction of power consumption and the improvement of driving capability, and the overall performance of the device is limited.

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