A polysilicon ingot furnace argon diversion system and diversion method

Abstract

The invention provides an argon guide system and argon guide method for a polycrystalline silicon ingot furnace. The argon guide system comprises an argon inlet straight pipe, a graphite crucible and a cover plate, wherein the opening edge of the graphite crucible is provided with a groove; cover plate exhaust holes are symmetrically distributed in the cover plate on the top around the argon inlet straight pipe; the outlet end of the argon inlet straight pipe is connected with the inlet end of a horn-shaped inlet pipe; the side wall of the outlet end of the argon inlet straight pipe is symmetrically distributed with outlet air holes; the outlet end of the horn-shaped inlet pipe is connected with the inlet end of a spraying-type inlet pipe; the spraying-type inlet pipe is a bottom pipe; the bottom of the spraying-type inlet pipe is symmetrically distributed with bottom air holes; the side wall of the spraying-type inlet pipe is symmetrically provided with side wall air holes. When the argon guide system is used, up and down different positions of the argon inlet straight pipe can be controlled aiming at different stages of material melting, growing and ending, thus the argon flowing can be optimized, the oxygen and carbon content in crystalline silicon is reduced, and meanwhile, the axial temperature gradient of crystalline silicon and melt silicon can be conveniently controlled.

Description

technical field [0001] The invention relates to an argon gas diversion system for manufacturing solar-grade polysilicon ingots, in particular to an argon gas diversion system for a polysilicon ingot furnace that can discharge impurities from a crucible as soon as possible, thereby reducing the pollution of impurities to polysilicon ingots as much as possible system. Background technique [0002] Directional solidification (DSS) crystal growth technology is the main method for solar-grade polysilicon growth. Since the preparation process of cast polysilicon is relatively simple and the cost is much lower than that of monocrystalline silicon, it has become the mainstream product of solar photovoltaic cells. However, compared with Czochralski monocrystalline silicon, cast polycrystalline silicon has higher impurities, defects and grain boundaries, so its conversion efficiency is lower than that of monocrystalline silicon cells. The main impurities contained in the polysilicon...

AI Technical Summary

Problems solved by technology

Although this device realizes that the impurity-containing argon gas discharged from the crucible can be discharged from the furnace body as soon as possible, the flow of argon gas inside the crucible has not been effectively improved, and the oxygen and carbon content cannot be effectively reduced.

[0016] The purpose of the present invention is to solve the problems of difficult control of argon gas transportation and high oxygen and carbon content in the traditional directional solidification polysilicon ingot furnace

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