Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

led epitaxial structure

An epitaxial structure and structure layer technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of PN junction breakdown, small distance, LED failure, etc., to achieve extended service life, reduced failure rate, reliability high effect

Active Publication Date: 2016-06-01
EPITOP PHOTOELECTRIC TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The two positive and negative electrodes of traditional LEDs are on the same surface of the chip, and the distance between them is small. Through electrostatic discharge ESD, electrostatic charges are easy to accumulate at both ends of the LED and then generate electrostatic voltage. When the electrostatic voltage increases to a certain value, It will cause the breakdown of the PN junction, which will increase the leakage. In severe cases, the PN junction will also break down to a short circuit, causing the LED to fail.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • led epitaxial structure
  • led epitaxial structure
  • led epitaxial structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] 1. Put a patterned (PatternedSapphireSubstrate, PSS) sapphire substrate (which can be a substrate of other materials such as GaN) 201 into the reaction chamber, N 2 :H 2 : NH 3 The flow rate ratio is (0:120:0) SLM, the reaction chamber pressure is 500Torr, the temperature is raised to 1080°C, the rotation speed is 1200 (rev / s), and it is stable for 300s, and the substrate is purified at high temperature.

[0016] 2. Reduce the temperature to 540°C, the ratio of N2:H2:NH3 is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 500 Torr, the rotation speed is 600 (rev / s), and a 35nm thick low-temperature GaN buffer layer 202 is grown.

[0017] 3. Raise the temperature to 1080°C, the ratio of N2:H2:NH3 is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 200Torr, the speed is 1200 (rev / s), and a high-temperature non-doped material with a thickness of 1000nm is grown GaN layer (U-GaN) 203 .

[0018] 4. Keep the temperature at 1050°C...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an LED epitaxy structure. The LED epitaxy structure comprises a substrate. A buffer layer is arranged on the substrate. The surface of the buffer layer is provided with an undoped GaN layer. The surface of the undoped GaN layer is provided with an N-type doped GaN layer. The surface of the N-type doped GaN layer is provided with an asymmetric resonant tunnel CART structure layer. The surface of the CART structure layer is provided with a multiple quantum well MQW layer. A P-type doped GaN layer is arranged on the MQW layer. According to the embodiments of the invention, the LED electrostatic discharge (Electro-Static Discharge, ESD) resistance capability can be effectively improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to an LED epitaxial structure. Background technique [0002] The traditional structure of GaN-based LED structure such as figure 1 As shown, it includes: sapphire substrate 101, buffer layer 102, undoped GaN layer (U-GaN) 103, N-type doped GaN layer (N-GaN) 104, multiple quantum well MQW layer 105 and P-type Doped GaN layer (P-GaN) 106 . [0003] The two positive and negative electrodes of the traditional LED are on the same surface of the chip, and the distance between them is small. Through the electrostatic discharge ESD, the accumulation of electrostatic charges at both ends of the LED is easy to generate electrostatic voltage. When the electrostatic voltage increases to a certain value, It will cause the breakdown of the PN junction, which will increase the leakage. In severe cases, the PN junction will also break down to a short circuit, causing the LED to fail. Conten...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06
CPCH01L33/06H01L33/32
Inventor 焦建军黄小辉李晓莹周德保郑远志陈向东康建梁旭东
Owner EPITOP PHOTOELECTRIC TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com