Semiconductor device and manufacturing method thereof

Abstract

Disclosed are a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate, a high k gate dielectric layer, an oxygen absorption layer and gate electrodes, wherein the high k gate dielectric layer is positioned on the upper surface of the substrate, the oxygen absorption layer is positioned on the upper surface or the lower surface of the high k gate dielectric layer, and the gate electrodes are positioned on the upper surface of the high k gate dielectric layer. The manufacturing method of the semiconductor device includes the steps: providing the substrate; forming the high k gate dielectric layer on the upper surface of the substrate; forming the oxygen absorption layer on the upper surface of the substrate or on the upper surface of the high k gate dielectric layer before or after forming the high k gate dielectric layer; forming the gate electrodes on the upper surface of the high k gate dielectric layer. The semiconductor device is provided with thin equivalent oxide, and the performance of the semiconductor device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Nowadays, in lower process nodes, a gate stack structure combining a gate dielectric layer of a high-k material with a low equivalent oxide thickness (EOT, Equivalent Oxide Thickness) and a metal gate electrode is widely used. [0003] Regarding the formation method of the transistor with the high-K / metal gate structure, reference may be made to the US patent document with publication number US 2009 / 0142899 A1. [0004] In order to improve the interface characteristics between the high-k gate dielectric layer and the substrate, an interface layer (interfacial layer, IL) can be set between the substrate and the high-k gate dielectric layer. A better quality interface can also provide a better quality interface between the high-k gate dielectric layer and the interface layer. In additi...

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Problems solved by technology

[0013] However, the equivalent oxide thickness of the high-k gate dielectric layer of the semiconductor device fabricated by the above method is very thick, which ultimately affects the performance of the semiconductor device

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