Plasma etching device and etching method thereof

Abstract

The invention discloses a plasma etching device and an etching method thereof. The plasma etching device comprises a processing chamber, a first electrode, a second electrode, a first gas supply end, a second gas supply end and an impulse control unit, wherein the first electrode is located in the processing chamber, provided with a platform for placing a wafer and electrically connected with at least one radio-frequency power supply; the second electrode is located in the processing chamber, faces the first electrode and is electrically connected with a direct-current power supply, and a first switch is arranged between the second electrode and the direct-current power supply; the first gas supply end feeds first gas into the processing chamber, and a second switch is arranged between the first gas supply end and the processing chamber; the second gas supply end feeds second gas into the processing chamber, and a third switch is arranged between the second gas supply end and the processing chamber; and the impulse control unit synchronously generates a first impulse signal, a second impulse signal and a third impulse signal for controlling the first switch, the second switch and the third switch respectively. The plasma etching device prevents accumulation of electric charge in a to-be-etched material during etching.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a plasma etching device and an etching method. Background technique [0002] The semiconductor manufacturing process is a planar manufacturing process, which combines photolithography, etching, deposition, and ion implantation processes. It needs to form a large number of various types of complex devices on the same substrate and connect them to each other to have a complete electronic functions. Among them, deviations in any step of the process may cause the performance parameters of the circuit to deviate from the design values. At present, as the feature size of VLSI devices is continuously reduced and the integration level is continuously improved, higher requirements are put forward for the control of each step of the process and the accuracy of the process results. [0003] Taking the etching process as an example, in the manufacture of integrated circuits, it is often neces...

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Problems solved by technology

[0005] However, plasma etching will damage the semiconductor substrate and the semiconductor devices formed on it. In particular, the electrical charging during plasma etching will seriously affect the morphology and performance of the formed devices.

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