An Asymmetric Channel Quantum Dot Field Effect Photon Detector

Abstract

The invention discloses an asymmetrical channel quantum dot field effect photon detector. The photon detector is based on a source-drain channel structure, and the source-drain channel is of an asymmetrical structure, the electric conductivity of the source-drain channel is under own control of a source-drain voltage, and a sensitive area of optical detection is located at the center of the source-drain channel. An epitaxial structure of the photon detector comprises a two-dimensional electron gas forming layer or a two-dimensional electron hole forming layer, a light absorption layer, a quantum dot charge limiting layer and a surface cover layer from the substrate, wherein the two-dimensional electron gas forming layer comprises heterogenous junctions and a doped layer. The device has the high-sensitivity optical sensing function that the width of a conductive channel in dozens to hundreds of nanometers scale between source and drain is under own control of the source-drain voltage, a quantum dot nearby two-dimensional electron gas limits the single charge under the condition of light incidence, thus an on-off state of the nano channels is changed greatly, great change of channel electric conduction is formed, and sequentially, high-sensitivity optical detection is finished.

Description

technical field [0001] The invention relates to the technical field of high-sensitivity light detection, in particular to an asymmetric channel quantum dot field-effect light detector. Background technique [0002] Weak light detection has a wide range of applications, such as high-resolution spectral measurement, non-destructive material analysis, air pollution measurement and control, biochemiluminescence, radiation detection, astronomical observation, optical time-domain reflection and other fields. With higher and higher requirements, the detection of single photon will be the ultimate detection goal. [0003] Traditional light detection generally uses semiconductor PIN devices. The device is made of heavily doped P and N for ohmic contact, and the middle intrinsic layer is used as the absorption region. The electron-hole pairs are separated in the depleted absorption region, and each is swept out by the electric field. The signal is output in the form of current at the...

AI Technical Summary

Problems solved by technology

[0005] In view of this, the main purpose of the present invention is to provide a device structure capable of weak light detection, to solve the problem of low detection sensitivity of ordinary detectors, to achieve high-sensitivity detection of fW light or even single photons

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