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LED chip lossless cutting method

A technology of LED chips and cutting methods, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of yield loss, no one guarantees product yield, affecting the light output efficiency and service life of LED chips, and achieves no structure. Damage, the effect of strong practicality

Inactive Publication Date: 2013-12-25
KUNSHAN AODELU AUTOMATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, when cutting traditional LED chips, it is necessary to use laser to cut on the surface of COW, but the products after laser burning have physically damaged the side walls of LED chips, seriously affecting the light output efficiency and service life of LED chips.
At present, the more commonly used SWE (high-temperature sidewall etching) technology, due to different epitaxy buffers and differences in epitaxy conditions, leads to unstable SWE technology and serious yield loss, so there is currently no guarantee for product yield. Cutting method that has no effect on the light extraction efficiency and service life of core particles

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] A non-destructive cutting method for LED chips, comprising the following steps:

[0017] (1) Grind the pre-process semi-finished COW of the LED chip to 75 μm, and deposit 4 μm of high-density SiO on the COW surface 2 as a mask;

[0018] (2) ICP dry etching: use high-adhesion negative glue as the photomask transfer carrier, and develop a line width of 4 μm according to the position of the cutting line between the core particles on the front of COW; when performing ICP dry etching , the gas passed through it is Cl 2 and Ar, where Cl 2 The content of Ar is 90 sccm, the content of Ar is 45 sccm; the power of the upper electrode is 100W, and the power of the lower electrode is 1000W;

[0019] (3) Use BOE solution to perform wet etching on the developed product, and the etching time is 160s;

[0020] (4) The etched SiO 2 The colloid on the surface is removed, and dry etching is performed by ICP at the same time, and the etching time is 600s;

[0021] (5) Using BOE to co...

Embodiment 2

[0023] A non-destructive cutting method for LED chips, comprising the following steps:

[0024] (1) Grind the pre-process semi-finished COW of the LED chip to 85 μm, and deposit 5 μm of high-density SiO on the COW surface 2 as a mask;

[0025] (2) ICP dry etching: use high-adhesion negative glue as the photomask transfer carrier, and develop a line width of 5 μm according to the position of the cutting line between the core particles on the front of COW; when performing ICP dry etching , the gas passed through it is Cl 2 and Ar, where Cl 2 The content of Ar is 90 sccm, the content of Ar is 45 sccm; the power of the upper electrode is 100W, and the power of the lower electrode is 1000W;

[0026] (3) Use BOE solution to perform wet etching on the developed product, and the etching time is 160s;

[0027] (4) The etched SiO 2 The colloid on the surface is removed, and dry etching is performed by ICP at the same time, and the etching time is 600s;

[0028] (5) Using BOE to co...

Embodiment 3

[0030] A non-destructive cutting method for LED chips, comprising the following steps:

[0031] (1) Grind the pre-process semi-finished COW of the LED chip to 80 μm, and deposit 4.5 μm of high-density SiO on the COW surface 2 as a mask;

[0032] (2) ICP dry etching: use high-adhesion negative photoresist as the photomask transfer carrier, and develop a line width of 4.5 μm according to the position of the cutting line between the core particles on the front of COW; perform ICP dry etching , the gas passed through it is Cl 2 and Ar, where Cl 2 The content of Ar is 90 sccm, the content of Ar is 45 sccm; the power of the upper electrode is 100W, and the power of the lower electrode is 1000W;

[0033] (3) Use BOE solution to perform wet etching on the developed product, and the etching time is 160s;

[0034] (4) The etched SiO 2 The colloid on the surface is removed, and dry etching is performed by ICP at the same time, and the etching time is 600s;

[0035] (5) Using BOE to...

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Abstract

The invention discloses an LED chip lossless cutting method which adopts ICP dry etching to replace traditional laser cutting. Firstly, high-density SiO2 of 4-5 microns is deposited on the surface of a COW to serve as a mask; secondly, a line width of 4-5 microns is exposed and developed through negative photoresist according to cutting path positions between core particles on the COW; thirdly, wet etching is adopted to etch clean the SiO2 in a protected area without a colloid; fourthly, a product after removing of the photoresist is sent to an ICP for dry etching; lastly, the COW with the SiO2 is sent to a rear segment to be cleaved, so that an LED chip is separated into the core particles dependent from each other. The LED chip lossless cutting method has the advantages of being simple and feasible, causing no structural damage to the LED core particles, meeting technological requirements for cleaving at the rear segment, causing no loss of the brightness of the LED core particles, and having high practicability.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a non-destructive cutting method for LED chips. Background technique [0002] With the rapid development of social economy, energy issues have gradually become a global issue; LED chips have the characteristics of high brightness, rich colors, low power consumption, and long life. LEDs are widely used in lighting, backlighting and other fields. At present, when cutting traditional LED chips, it is necessary to use laser to cut on the surface of COW, but the products after laser burning have physically damaged the side walls of LED chips, seriously affecting the light extraction efficiency and service life of LED chips. At present, the more commonly used SWE (high-temperature sidewall etching) technology, due to different epitaxy buffers and differences in epitaxy conditions, leads to unstable SWE technology and serious yield loss, so there is currently no guarantee for pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L21/266H01L21/302
Inventor 郁彬
Owner KUNSHAN AODELU AUTOMATION TECH
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