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Surge protection circuit and production method thereof

A surge protection and circuit technology, applied in emergency protection circuit devices, circuits, emergency protection circuit devices for limiting overcurrent/overvoltage, etc. Slow and other problems, to achieve the effect of strong ability to withstand voltage and current impact and fast speed

Active Publication Date: 2013-11-06
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional surge protection devices mainly include varistors, gas discharge tubes, TVS diodes, etc., but varistors have weak voltage shock resistance and short service life. Although gas discharge tubes can withstand large current shocks, their response speed is slow. Slow, although TVS has the advantages of small size and fast response, it cannot withstand the impact of high current and has a large capacitance

Method used

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  • Surge protection circuit and production method thereof
  • Surge protection circuit and production method thereof
  • Surge protection circuit and production method thereof

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Embodiment Construction

[0046] Below in conjunction with accompanying drawing and embodiment, describe technical solution of the present invention in detail:

[0047] Such as figure 1 As shown, a surge protection circuit according to the present invention includes 2 MOSFETs of the first conductivity type, 2 MOSFETs of the second conductivity type, 2 gate thyristors of the first conductivity type and 2 Gate thyristors of the second conductivity type, the gates of the two MOSFETs of the first conductivity type are short-circuited to lead to the first electrode GN, the source and the gates of the two gate thyristors of the second conductivity type respectively short-circuit, the anodes of the two gate thyristors of the second conductivity type are short-circuited, the gates of the two MOSFETs of the second conductivity type are short-circuited, and the second electrode GP and the source are respectively connected to the two gate thyristors of the second conductivity type. The gates of the gate thyristo...

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Abstract

The invention relates to the technology of electronic circuits and semiconductors, in particular to a programmable surge protection circuit and a production method thereof. The surge protection circuit is formed by two Metal-Oxide -Semiconductor Field Effect Transistors (MOSFETs) of the first conduction type, two MOSFETs of the second conduction type, two gate pole thyristors of the first conduction type and two gate pole thyristors of the second conduction type. On and off of the thyristors are mainly controlled by drain-source currents of the MOSFETs, and accordingly surge currents are released. The surge protection circuit and the production method thereof have the advantages that the surge protection circuit has fast response (ns level) and strong voltage and current impact bearing capacity, can achieve double-wire and bidirectional surge protection simultaneously and can adjust sensitiveness of protection devices for surge voltage as required.

Description

technical field [0001] The invention relates to electronic circuits and semiconductor technologies, in particular to a surge protection circuit and a manufacturing method thereof. Background technique [0002] Electronic equipment often encounters unexpected voltage transients and surge currents during use, which makes the whole system face the risk of electrical overstress failure and malfunction, and the reliability of the system is also greatly reduced. Therefore, protection against voltage transients and surges has become an important part of improving the reliability of the overall system. Traditional surge protection devices mainly include varistors, gas discharge tubes, TVS diodes, etc., but varistors have weak voltage shock resistance and short service life. Although gas discharge tubes can withstand large current shocks, their response speed is slow. Slow, although TVS has the advantages of small size and fast response, it cannot withstand the impact of high curren...

Claims

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Application Information

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IPC IPC(8): H02H9/02H02H9/04H01L27/02H01L21/782
Inventor 李泽宏邹有彪刘建宋文龙宋洵奕张金平任敏
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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