Method for manufacturing LED (light-emitting diode)

Abstract

The invention provides a method for manufacturing an LED (light-emitting diode). Firstly a picoseconds laser is used for performing laser internal cutting on a sapphire substrate according to a preset path to form an internal cut pattern inside the sapphire substrate and make the structure of a specific position of the sapphire substrate to change, and then epitaxial growth is performed to manufacture a light-emitting epitaxial structure to thin the sapphire substrate, and finally performing splintering along the internal cut pattern to complete the manufacturing. According to the method, since a process method that laser internal cutting is firstly performed on the sapphire substrate and the light-emitting laser epitaxy is then performed is adopted, damage caused by direct or indirect irradiation gallium nitride by laser can be prevented, luminance of the LED and a yield rate of final products are helped to improve, and a problem that the light-emitting epitaxy has a boundary effect caused by walkways firstly formed on the surface of the sapphire can be prevented. The method for manufacturing the LED is stable in process, high in repeatability, and can be applied to industrial production.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to a method for manufacturing a light emitting diode. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes are made of III-IV compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors, and its core is a PN juncti...

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for manufacturing a light-emitting diode, which is used to solve the problem of reducing the product yield and product luminescence caused by internal damage of the light-emitting diode during the laser scribing process in the prior art. Efficiency or the formation of corridors on the surface of sapphire substrates causing boundary effects in light-emitting epitaxy

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