A silicon solar cell with a thin film covering the front electrode and its manufacturing process

一种太阳能电池、制造工艺的技术，应用在太阳能电池领域，能够解决影响电池转换效率、易被腐蚀和氧化、接触面积减少等问题，达到提高电池转换效率、提高抗腐蚀性和抗氧化能力、降低串联电阻的效果

Active Publication Date: 2016-03-23
XUZHOU GUYANG NEW ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] 2. When the silver paste is in contact with the silicon surface, it is blocked by the silicon nitride film, and the contact area is reduced, resulting in an increase in the series resistance, which affects the conversion efficiency of the battery
[0018] 4. The electrode is exposed on the surface of the film, which is easily corroded and oxidized

Method used

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  • A silicon solar cell with a thin film covering the front electrode and its manufacturing process

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Embodiment 1

[0044] Embodiment 1: This embodiment provides a manufacturing process of thin-film covered MWT solar cells, which is completed through the following process steps:

[0045] 1) Punching: Use a laser to open a through hole 1 with a diameter of 200-300 microns at a predetermined position on the selected P-type silicon wafer. The so-called predetermined position is the position of the front electrode 3 of the solar cell, and the number of through holes is also the same as that of the front electrode 3. The number is the same.

[0046] 2) Texturing: Use HF and HNO3 to corrode the silicon wafer, forming a 1-3 micron egg structure on the surface of the silicon wafer.

[0047] 3) Diffusion: Phosphorus oxychloride and oxygen are used to diffuse phosphorus on the silicon wafer at high temperature. The diffusion resistance is 85 ohms to form a PN junction.

[0048] 4) Through hole back junction protection: A paraffin mask is printed on the back of the solar cell through hole to protect the throu...

Embodiment 2

[0056] Embodiment 2: This embodiment proposes a thin film covering MWT structure SE solar cell manufacturing process, including the following steps:

[0057] 1) Punching: Use a laser to open a through hole 1 with a diameter of 200-300 microns at a predetermined position on the selected P-type silicon wafer. The so-called predetermined position is the position of the front electrode 3 of the solar cell, and the number of through holes is also the same as that of the front electrode 3. The number is the same.

[0058] 2) Texturing: Use HF and HNO3 to corrode the silicon wafer, forming a 1-3 micron egg structure on the surface of the silicon wafer.

[0059] 3) Diffusion: Phosphorus oxychloride and oxygen are used to diffuse phosphorus on the silicon wafer at high temperature. The diffusion resistance is 85 ohms to form a PN junction.

[0060] 4) Through hole back junction protection: A paraffin mask is printed on the back of the solar cell through hole to protect the through hole and the...

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Abstract

A silicon solar cell with front electrodes covered by a thin film and a process for manufacturing the same. When an MWT back contact solar cell is manufactured, the front electrodes are covered completely by an antireflection film, namely the front electrodes are directly in contact with the silicon wafer without penetration of the antireflection film, so as to reduce the series resistance, and improve the cell conversion efficiency. Meanwhile, the penetration depth when the front electrode silver paste is printed is also easier to control, so that the process is simplified. The front electrodes covered completely by the antireflection film are not directly in contact with the outside, so as to improve the corrosion resistance and oxidation resistance of the front electrodes.

Description

Technical field [0001] The invention relates to a silicon solar cell with a thin film covering a front electrode and a manufacturing process thereof, belonging to the field of solar cells. Background technique [0002] The existing solar cell preparation technologies all adopt the process route of coating first and then printing. This process route places high technical requirements on the silver paste on the front of silicon solar cells, requiring it not only to quickly penetrate the silicon nitride film, but also A good ohmic contact is formed with the silicon substrate; at the same time, the penetration of silicon must be strictly controlled to avoid leakage. This requirement has caused the silicon solar front silver paste technology to be monopolized by foreign companies such as DuPont. How to break through the front-side silver paste technology of silicon solar cells has become the main direction of the industry. The patent of the present invention opens up another path. By ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/0216
CPCH01L31/02168H01L31/02245Y02E10/547Y02E10/50
Inventor 张凤英
Owner XUZHOU GUYANG NEW ENERGY TECH CO LTD
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